Shkerdin, G, Stiens, J & Vounckx, R 2000, 'A Multi-Valley Model for Hot Free-Electron Nonlinearities at 10.6µm in Highly Doped n-GaAs', European Physical Journal - Applied Physics, no. 3, pp. 180.
Shkerdin, G., Stiens, J., & Vounckx, R. (2000). A Multi-Valley Model for Hot Free-Electron Nonlinearities at 10.6µm in Highly Doped n-GaAs. European Physical Journal - Applied Physics, (3), 180.
@article{4507efa003a44f668f5a34ecc5e2c76d,
title = "A Multi-Valley Model for Hot Free-Electron Nonlinearities at 10.6µm in Highly Doped n-GaAs",
author = "Gennady Shkerdin and Johan Stiens and Roger Vounckx",
note = "Eur. Phys. J - Appl. Phys., Vol. 12, Nr. 3, pp. 169-180.",
year = "2000",
language = "English",
pages = "180",
journal = "European Physical Journal - Applied Physics",
issn = "1286-0042",
publisher = "EDP Sciences",
number = "3",
}