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Abstract 

IMEC/VUB patent. Nummers: US5798520 An optoelectronic cell structure includes a plurality of pnpn-devices and circuitry for driving these pnpn-devices. The anodes or the cathodes of said pnpn-devices tied together form a competition node allowing differential charge amplification to take place. The unconnected electrode of each of the pnpn-devices is driven by a pair of complementary transistors. Light input on the pnpn-devices is converted into charge carriers. A forward bias amplifies the difference in charge content in the pnpn-devices by differential competition. A reverse bias turns off each pnpn-device at its own pace, the turn-off times rendering an estimate of the charge content in each pnpn-device present before turn-off. The total system forms a sensitive optical receiver for use in optical interconnects between two or more locations.

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