Fobelets, K, Vounckx, R, Genoe, J, Mertens, R & Borghs, G 1992, 'Determination of the band line-up for strained InGaAs/AlAs heterojunctions using resonant tunneling diodes', Superlattices and Microstructures, no. 1, pp. 29.
Fobelets, K., Vounckx, R., Genoe, J., Mertens, R., & Borghs, G. (1992). Determination of the band line-up for strained InGaAs/AlAs heterojunctions using resonant tunneling diodes. Superlattices and Microstructures, (1), 29.
@article{e04b5122cede45daacc74e21e8bf5138,
title = "Determination of the band line-up for strained InGaAs/AlAs heterojunctions using resonant tunneling diodes",
author = "Kristel Fobelets and Roger Vounckx and Jan Genoe and Robert Mertens and Gustaaf Borghs",
note = "Superlattices and Microstructures , Vol. 11, Nr. 1, pp. 27 - 29.",
year = "1992",
language = "English",
pages = "29",
journal = "Superlattices and Microstructures",
number = "1",
}