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Abstract 

IMEC/VUB patent. Nummers: EP0682814; WO9515583; US5652439 The invention relates generally to optoelectronic pnpn devices and more particularly to a layer structure suitable for fast electrical complete turn-off of such devices and to a method for efficient and fast operation of such devices and differential pairs of such devices. The devices have four layers and three junctions, and the invention provides for complete depletion of both center layers. The differential pair of pnpn devices also provides a very sensitive optical receiver which combines a very high cycle frequency with a very high optical sensitivity.

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