Gallium nitride (GaN) technologies have become an essential role in commercial advanced RF systems, which accompany emerging RF electrostatic discharge (ESD) reliability challenges. As opposed to ESD clamp transistors in LV CMOS technologies, a mis-correlation between standard-defined human body model (HBM) ESD robustness and commonly used TLP failure current was observed in GaN (MIS) high electron mobility transistors (HEMTs). Using transient HBM I-V characteristics, a novel discharge model is proposed to explain the transient discharge mechanism. The TCAD and SPICE simulations confirmed that the observed mis-correlation between TLP and HBM is attributed to 2-dimensional electron gas (2DEG) resistance modulation in response to HBM ESD transient voltage waveforms. The HBM waveforms under full transient duration in terms of rising and falling edges are further discussed. Eventually, the failure mechanisms in the TLP IVs and the HBM transient IVs can be well correlated in GaN (MIS)HEMTs.
Wu, WM, Ker, MD, Chen, SH, Sibaja-Hernandez, A, Yadav, S, Peralagu, U, Yu, H, Alian, AR, Putcha, V, Parvais, B, Collaert, N & Groeseneken, G 2022, 'ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs', IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 2180-2187. https://doi.org/10.1109/TED.2022.3141038
Wu, W. M., Ker, M. D., Chen, S. H., Sibaja-Hernandez, A., Yadav, S., Peralagu, U., Yu, H., Alian, A. R., Putcha, V., Parvais, B., Collaert, N., & Groeseneken, G. (2022). ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs. IEEE Transactions on Electron Devices, 69(4), 2180-2187. https://doi.org/10.1109/TED.2022.3141038
@article{216e810da85340ec97fd809d5bcb15ba,
title = "ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs",
abstract = "Gallium nitride (GaN) technologies have become an essential role in commercial advanced RF systems, which accompany emerging RF electrostatic discharge (ESD) reliability challenges. As opposed to ESD clamp transistors in LV CMOS technologies, a mis-correlation between standard-defined human body model (HBM) ESD robustness and commonly used TLP failure current was observed in GaN (MIS) high electron mobility transistors (HEMTs). Using transient HBM I-V characteristics, a novel discharge model is proposed to explain the transient discharge mechanism. The TCAD and SPICE simulations confirmed that the observed mis-correlation between TLP and HBM is attributed to 2-dimensional electron gas (2DEG) resistance modulation in response to HBM ESD transient voltage waveforms. The HBM waveforms under full transient duration in terms of rising and falling edges are further discussed. Eventually, the failure mechanisms in the TLP IVs and the HBM transient IVs can be well correlated in GaN (MIS)HEMTs. ",
keywords = "Electrostatic discharge (ESD), gallium nitride (GaN), high electron mobility transistor (HEMT), human body model (HBM), radio frequency (RF)",
author = "Wu, {Wei Min} and Ker, {Ming Dou} and Chen, {Shih Hung} and Arturo Sibaja-Hernandez and Sachin Yadav and Uthayasankaran Peralagu and Hao Yu and Alian, {Ali Reza} and Vamsi Putcha and Bertrand Parvais and Nadine Collaert and Guido Groeseneken",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",
year = "2022",
month = apr,
day = "1",
doi = "10.1109/TED.2022.3141038",
language = "English",
volume = "69",
pages = "2180--2187",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}