Subramanian, V., Parvais, B., Borremans, J., Mercha, A., Linten, D., Wambacq, P., Loo, J., Dehan, M., Gustin, C., Collaert, N., Kubicek, S., Lander, R. J. P., Hooker, J. C., Cubaynes, F. N., Donnay, S., Jurczak, M., Groeseneken, G., Sansen, W., & Decoutere, S. (2006). Planar bulk MOSFETs versus FinFETs: an analog/RF perspective. IEEE Transactions on Electron Devices, 53(12), 3071-3079.

@article{45899ba100704327822817accb80ba34,
title = "Planar bulk MOSFETs versus FinFETs: an analog/RF perspective",
abstract = "Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage, excellent subthreshold slope, and better voltage gain without degradation of noise or linearity. This makes them attractive for digital and low-frequency RF applications around 5 GHz, where the performance-power tradeoff is important. On the other hand, in high-frequency applications, planar bulk MOSFETs are seen to hold the advantage over FinFETs due to their higher peak transconductance. However, this comes at a cost of a reduced voltage gain of bulk MOSFETs.",
keywords = "cmos, scaling, finfet",
author = "V. Subramanian and Bertrand Parvais and Jonathan Borremans and A. Mercha and Dimitri Linten and Piet Wambacq and Josine Loo and M. Dehan and Cedric Gustin and Nadine Collaert and S Kubicek and Lander, {R. J. P.} and J.c. Hooker and Cubaynes, {F. N.} and S. Donnay and M. Jurczak and G. Groeseneken and Willy Sansen and S. Decoutere",
year = "2006",
month = dec,
day = "1",
language = "English",
volume = "53",
pages = "3071--3079",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}