We investigate the effect of varying the gate-to-drain spacing and the gate field-plate on the device linearity of GaN HEMTs on Si for 0.11μm, 0.15μm, and 0.19μm gate lengths. The gain compression, phase distortion, and harmonic distortion metrics are measured using a nonlinear characterisation setup calibrated at 6GHz up to the third harmonic. The acquired nonlinearity metrics are correlated with the extrinsic device parasitics extracted from S-parameter measurements. We observe that excessive gate field-plate length scaling down to 0.05μm lowers the total phase distortion at the expense of gain linearity and harmonic distortion in Class AB while minimising the gate-to-drain spacing alleviates the harmonic distortion only for devices of 0.19μm gate length. Further evaluation, under matched conditions, using a passive load-pull measurement setup points to a decline in the peak achievable PAE and PSAT at gate field-plates smaller than 0.12μm.
ElKashlan, R, Khaled, A, Rodriguez, R, Putcha, V, Peralagu, U, Alian, A, Collaert, N, Wambacq, P & Parvais, B 2022, Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation. in 2021 16th European Microwave Integrated Circuits Conference (EuMIC). EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference, IEEE, pp. 30-33, European Microwave Week, London, United Kingdom, 2/04/22. https://doi.org/10.23919/eumic50153.2022.9783630
ElKashlan, R., Khaled, A., Rodriguez, R., Putcha, V., Peralagu, U., Alian, A., Collaert, N., Wambacq, P., & Parvais, B. (2022). Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation. In 2021 16th European Microwave Integrated Circuits Conference (EuMIC) (pp. 30-33). (EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference). IEEE. https://doi.org/10.23919/eumic50153.2022.9783630
@inproceedings{e098ad0fa1464641b9c72da6d6cda55b,
title = "Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation",
abstract = "We investigate the effect of varying the gate-to-drain spacing and the gate field-plate on the device linearity of GaN HEMTs on Si for 0.11μm, 0.15μm, and 0.19μm gate lengths. The gain compression, phase distortion, and harmonic distortion metrics are measured using a nonlinear characterisation setup calibrated at 6GHz up to the third harmonic. The acquired nonlinearity metrics are correlated with the extrinsic device parasitics extracted from S-parameter measurements. We observe that excessive gate field-plate length scaling down to 0.05μm lowers the total phase distortion at the expense of gain linearity and harmonic distortion in Class AB while minimising the gate-to-drain spacing alleviates the harmonic distortion only for devices of 0.19μm gate length. Further evaluation, under matched conditions, using a passive load-pull measurement setup points to a decline in the peak achievable PAE and PSAT at gate field-plates smaller than 0.12μm.",
author = "Rana ElKashlan and Ahmad Khaled and Raul Rodriguez and Vamsi Putcha and Uthayasankaran Peralagu and AliReza Alian and Nadine Collaert and Piet Wambacq and Bertrand Parvais",
year = "2022",
month = apr,
day = "3",
doi = "10.23919/eumic50153.2022.9783630",
language = "English",
isbn = "978-1-6654-4722-5",
series = "EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference",
publisher = "IEEE",
pages = "30--33",
booktitle = "2021 16th European Microwave Integrated Circuits Conference (EuMIC)",
note = "European Microwave Week : United in Microwaves, EuMW ; Conference date: 02-04-2022 Through 07-04-2022",
url = "https://www.eumw2021.com/",
}