Shkerdin, G, Stiens, J & Vounckx, R 2002, 'X-valley influence on hot frre electron absorption and nonlinearities at 10.6 micron in highly doped GaAs', Eur. Phys. J.- Appl. Phys., no. 1, pp. 38. <http://www.iop.org/>
Shkerdin, G., Stiens, J., & Vounckx, R. (2002). X-valley influence on hot frre electron absorption and nonlinearities at 10.6 micron in highly doped GaAs. Eur. Phys. J.- Appl. Phys., (1), 38. http://www.iop.org/
@article{dfe6bd73688645c9b705c5458eca77b2,
title = "X-valley influence on hot frre electron absorption and nonlinearities at 10.6 micron in highly doped GaAs",
author = "Gennady Shkerdin and Johan Stiens and Roger Vounckx",
note = "Eur. Phys. J.- Appl. Phys., Vol. 19, Nr. 1, pp. 29 - 38.",
year = "2002",
language = "English",
pages = "38",
journal = "Eur. Phys. J.- Appl. Phys.",
issn = "1286-0050",
publisher = "EDP Sciences",
number = "1",
}