In this report, we investigate the electrostatic discharge (ESD) robustness of five different photodetectors, comprising three vertical and two lateral structures, under varying pulse widths of very fast transmission line pulsing (vfTLP). ESD robustness is a critical factor in the performance and reliability of photodetectors, especially in environments where they may be exposed to high-voltage transients. Understanding the characteristics of these devices under ESD stress can guide improvements in 2.5D/3D assembly process
Lin, P-Y, chen, W, Simicic, M, Croes, K & Wambacq, P 2025, 'Nanosecond ESD robustness of advanced silicon photonics devices', International ESD workshop, Zegreb, Croatia, 12/05/25 - 16/05/25.
Lin, P.-Y., chen, W., Simicic, M., Croes, K., & Wambacq, P. (Accepted/In press). Nanosecond ESD robustness of advanced silicon photonics devices. Poster session presented at International ESD workshop, Zegreb, Croatia.
@conference{a162d8b8fc10488b81040c86ad670f5a,
title = "Nanosecond ESD robustness of advanced silicon photonics devices",
abstract = "In this report, we investigate the electrostatic discharge (ESD) robustness of five different photodetectors, comprising three vertical and two lateral structures, under varying pulse widths of very fast transmission line pulsing (vfTLP). ESD robustness is a critical factor in the performance and reliability of photodetectors, especially in environments where they may be exposed to high-voltage transients. Understanding the characteristics of these devices under ESD stress can guide improvements in 2.5D/3D assembly process",
author = "Po-Yen Lin and Wen-chieh chen and Marko Simicic and Kristof Croes and Piet Wambacq",
year = "2025",
month = may,
day = "12",
language = "English",
note = "International ESD workshop, IEW ; Conference date: 12-05-2025 Through 16-05-2025",
url = "https://www.esda.org/events/2025-international-esd-workshop-iew-europe/",
}