This work presents a study focused on current collapse (CC) in several RF GaN-on-Si HEMT architectures under ON-state stress and offers insights into the significantly high CC observed during ON-state stress. The ON-state stress is identified as a more detrimental stress state to device reliability compared to SemiON and OFFstate stress at the same VDS. This work explores the underlying physical mechanism of CC under the ON-state stress by a comprehensive comparison of various RF GaN-on-Si HEMT device architectures. We find that electric field engineering at the gate corner can significantly reduce CC under the ONstate stress.
Gupta, A, Yu, H, Yadav, S, Alian, A, Peralagu, U, Jang, E-S, Kuo, Y-C, Collaert, N & Parvais, B 2025, Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs. in 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE International Reliability Physics Symposium (IRPS) 2025, Monterey, CA, USA, pp. 9A.3-1-9A.3-6. https://doi.org/10.1109/IRPS48204.2025.10983392
Gupta, A., Yu, H., Yadav, S., Alian, A., Peralagu, U., Jang, E.-S., Kuo, Y.-C., Collaert, N., & Parvais, B. (2025). Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs. In 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings (2025 ed., pp. 9A.3-1-9A.3-6). (IEEE International Reliability Physics Symposium Proceedings). IEEE International Reliability Physics Symposium (IRPS) 2025. https://doi.org/10.1109/IRPS48204.2025.10983392
@inproceedings{6f74f66c0c8e4709a426ed89d196809e,
title = "Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs",
abstract = "This work presents a study focused on current collapse (CC) in several RF GaN-on-Si HEMT architectures under ON-state stress and offers insights into the significantly high CC observed during ON-state stress. The ON-state stress is identified as a more detrimental stress state to device reliability compared to SemiON and OFFstate stress at the same VDS. This work explores the underlying physical mechanism of CC under the ON-state stress by a comprehensive comparison of various RF GaN-on-Si HEMT device architectures. We find that electric field engineering at the gate corner can significantly reduce CC under the ONstate stress.",
keywords = "Current Collapse, GaN-on-Si, MODFET, ON-state Stress, Radio Frequency (RF), HEMTs, MISHEMT, gallium nitride (GaN)",
author = "Amratansh Gupta and Hao Yu and Sachin Yadav and AliReza Alian and Uthayasankaran Peralagu and E-San Jang and Ying-Chun Kuo and Nadine Collaert and Bertrand Parvais",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.",
year = "2025",
month = may,
doi = "10.1109/IRPS48204.2025.10983392",
language = "English",
isbn = "979-8-3315-0478-6",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "IEEE International Reliability Physics Symposium (IRPS) 2025",
pages = "9A.3--1--9A.3--6",
booktitle = "2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings",
edition = "2025",
}