In this work, we discuss whether a positive gate bias instability (Δ V th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V th issue.
Yu, H, ElKashlan, R, Tsai, M-C, Yang, Y, Guenach, M, Kuo, Y-C, Yadav, S, Sullivan, BO, Rathi, A, Gupta, A, Xiao, D, Desset, C, Alian, A, Peralagu, U, Afanasiev, V, Wu, T-L, Parvais, B & Collaert, N 2025, Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. in 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE International Reliability Physics Symposium (IRPS) 2025, Monterey, CA, USA, pp. 11C.1-1-11C.1-6. https://doi.org/10.1109/IRPS48204.2025.10983812
Yu, H., ElKashlan, R., Tsai, M.-C., Yang, Y., Guenach, M., Kuo, Y.-C., Yadav, S., Sullivan, B. O., Rathi, A., Gupta, A., Xiao, D., Desset, C., Alian, A., Peralagu, U., Afanasiev, V., Wu, T.-L., Parvais, B., & Collaert, N. (2025). Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. In 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings (2025 ed., pp. 11C.1-1-11C.1-6). (IEEE International Reliability Physics Symposium Proceedings). IEEE International Reliability Physics Symposium (IRPS) 2025. https://doi.org/10.1109/IRPS48204.2025.10983812
@inproceedings{d6e36f86d8d54866aec4c0b2246df4b1,
title = "Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability",
abstract = "In this work, we discuss whether a positive gate bias instability (Δ V th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V th issue.",
keywords = "Gate Reliability, GaN MISHEMT, MISHEMT, gallium nitride (GaN), Power Amplifier (PA), 2DEG, Threshold Voltage Instability, MODFETs, QAM, OFDM, MOCVD, 5G, PAPR",
author = "Hao Yu and Rana ElKashlan and Meng-Che Tsai and Yi Yang and Mamoun Guenach and Ying-Chun Kuo and Sachin Yadav and Sullivan, {Barry O} and Aarti Rathi and Amratansh Gupta and Dongping Xiao and Claude Desset and AliReza Alian and Uthayasankaran Peralagu and Valeri Afanasiev and Tian-Li Wu and Bertrand Parvais and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.",
year = "2025",
month = may,
doi = "10.1109/IRPS48204.2025.10983812",
language = "English",
isbn = "979-8-3315-0478-6",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "IEEE International Reliability Physics Symposium (IRPS) 2025",
pages = "11C.1--1--11C.1--6",
booktitle = "2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings",
edition = "2025",
}