Lin, P.-Y., Simicic, M., Hsieh, P.-Y., chen, W., Vermeersch, B., Coughlan, C., Berciano, M., Vaskasi, J. R., Bipul, S., Chakrabarti, M., Velenis, D., Ban, Y., Ferraro, F., Van Campenhout, J., Croes, K., & Wambacq, P. (Accepted/In press). Differential Resistance Lowering Effect in High-Speed Ge Photodetectors During Nanosecond ESD Events. IEEE International Reliability Physics Symposium proceedings. https://doi.org/10.1109/IRPS61424.2026.11499300

@article{cbe68ccdd0f44da2b91b474c548b008a,
title = "Differential Resistance Lowering Effect in High-Speed Ge Photodetectors During Nanosecond ESD Events",
abstract = "An electrothermally induced resistance modulation in advanced high-speed Ge photodetectors under nanosecond electrostatic discharge (ESD) events is investigated through measurements and physics-based models. By employing a very-fast transmission line pulsing (VF–TLP) test system, the measured I–V characteristics reveal that the differential resistance-lowering (DRL) effect is triggered under a 1-ns pulse duration, consistent with temperature-dependent intrinsic carrier density behavior and TCAD simulation results. Among the evaluated devices, the vertical Ge photodetector (VPIN) exhibits the most pronounced DRL behavior, attributed to its device geometry. Understanding these mechanisms can help improve ESD robustness and enhance the reliability of next‑generation high‑speed silicon photonic technologies.",
author = "Po-Yen Lin and Marko Simicic and Ping-Yi Hsieh and Wen-chieh chen and Bjorn Vermeersch and Conor Coughlan and Mathias Berciano and Vaskasi, \{Javad Rahimi\} and Swetanshu Bipul and Maumita Chakrabarti and Dimitrios Velenis and Yoojin Ban and Filippo Ferraro and \{Van Campenhout\}, Joris and Kristof Croes and Piet Wambacq",
year = "2026",
doi = "10.1109/IRPS61424.2026.11499300",
language = "English",
journal = "IEEE International Reliability Physics Symposium proceedings",
issn = "1938-1891",
publisher = "IEEE",
}