Gate current is known to limit device performance, yet a detailed analysis of its impact on RF power performance has not been extensively documented. This article examines the influence of gate current on RF power performance. A small-signal equivalent-circuit analysis shows that gate current degrades the device's RF power performance, with higher gate currents causing greater degradation. In addition, the effect of gate current varies with frequency due to the frequency-dependent impedance of Cgs and Cgd, resulting in more significant degradation at lower frequencies because of the parallel connection of gate conduction with these capacitors. These findings are validated under large-signal conditions using an experimentally verified device model for InAlN/GaN high-electron-mobility transistors (HEMTs).
Xiao, D, Schreurs, DMM-P, ElKashlan, R, Zhang, Y, Cooman, A, Khaled, A, Smellie, D, Alian, A, Asad, M, Parvais, B, Wambacq, P, Peralagu, U & Collaert, N 2025, 'Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs', IEEE Transactions on Microwave Theory and Techniques, vol. 73, no. 2, pp. 779-788. https://doi.org/10.1109/TMTT.2024.3431196
Xiao, D., Schreurs, D. M. M.-P., ElKashlan, R., Zhang, Y., Cooman, A., Khaled, A., Smellie, D., Alian, A., Asad, M., Parvais, B., Wambacq, P., Peralagu, U., & Collaert, N. (2025). Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques, 73(2), 779-788. https://doi.org/10.1109/TMTT.2024.3431196
@article{b1d32d4f91a747abb9bcbf65853da76d,
title = "Analysis of the Gate Current{\textquoteright}s Influence on the RF Power Performance of InAlN/GaN HEMTs",
abstract = "Gate current is known to limit device performance, yet a detailed analysis of its impact on RF power performance has not been extensively documented. This article examines the influence of gate current on RF power performance. A small-signal equivalent-circuit analysis shows that gate current degrades the device's RF power performance, with higher gate currents causing greater degradation. In addition, the effect of gate current varies with frequency due to the frequency-dependent impedance of Cgs and Cgd, resulting in more significant degradation at lower frequencies because of the parallel connection of gate conduction with these capacitors. These findings are validated under large-signal conditions using an experimentally verified device model for InAlN/GaN high-electron-mobility transistors (HEMTs).",
author = "Dongping Xiao and Schreurs, \{Dominique M. M.-P.\} and Rana ElKashlan and Yang Zhang and Adam Cooman and Ahmad Khaled and Daanish Smellie and AliReza Alian and Muhammad Asad and Bertrand Parvais and Piet Wambacq and Uthayasankaran Peralagu and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2025",
month = feb,
doi = "10.1109/TMTT.2024.3431196",
language = "English",
volume = "73",
pages = "779--788",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}