Yesayan, A., Jazaeri, F., Parvais, B., & Sallese, J. M. (2025). Intrinsic Limitation of 2DEG Modulation in GaN-MISHEMT. IEEE TRANSACTIONS ON ELECTRON DEVICES, 72(11), 5919-5925. https://doi.org/10.1109/TED.2025.3610338

@article{73385d125c3449caa97742172f0ec061,
title = "Intrinsic Limitation of 2DEG Modulation in GaN-MISHEMT",
abstract = "This article presents an analytical model of the barrier layer in GaN-MISHEMT that predicts a limitation of the channel charge density that is expected to reach an asymptotic value under high gate voltages, a feature that was not reported before. We find that this behavior is very sensitive to the device parameters such as the AlGaN barrier thickness, composition, and polarization-induced charge density. Explicit relationships for charge saturation in the quantum well (QW) are proposed and can be used to optimize GaN-MISHEMT architectures.",
author = "A. Yesayan and F. Jazaeri and B. Parvais and Sallese, \{J. M.\}",
note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2025",
doi = "10.1109/TED.2025.3610338",
language = "English",
volume = "72",
pages = "5919--5925",
journal = "IEEE TRANSACTIONS ON ELECTRON DEVICES",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}