Kuo, Y.-C., Yu, H., de Almeida Braga, N., Fang, J., Gupta, A., Yadav, S., Alian, A., Peralagu, U., Collaert, N., & Parvais, B. (2025). Modeling of Hole Generation Process in AlGaN/GaN HEMTs. In SISPAD 2025 - International Conference on Simulation of Semiconductor Processes and Devices (pp. 1-4). (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). IEEE. https://doi.org/10.1109/SISPAD66650.2025.11186384

@inproceedings{f0f601a6bf2b4b7295c9d15e65fdee63,
title = "Modeling of Hole Generation Process in AlGaN/GaN HEMTs",
abstract = "The process of hole generation in GaN HEMTs during the semi-on state continues to be an active field of research. This study analyzes the VDS dependence of hole current in AlGaN/GaN HEMTs using an extended Okuto-Crowell model that accounts for both low-field onset and high-field saturation effects. The model accurately explains the non-conventional bias dependence of the measured hole current. This model enables the simulation of trap-assisted hole generation and may serve as a foundation for future TCAD studies of related phenomena, such as threshold voltage instability and the kink effect.",
keywords = "AlGaN/GaN HEMT, semi-on state, hole current, hot carrier induced hole generation, TCAD modeling",
author = "Ying-Chun Kuo and Hao Yu and \{de Almeida Braga\}, Nelson and Jingtian Fang and Amratansh Gupta and Sachin Yadav and AliReza Alian and Uthayasankaran Peralagu and Nadine Collaert and Bertrand Parvais",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.",
year = "2025",
month = oct,
day = "28",
doi = "10.1109/SISPAD66650.2025.11186384",
language = "English",
isbn = "9798331548841",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "IEEE",
pages = "1--4",
booktitle = "SISPAD 2025 - International Conference on Simulation of Semiconductor Processes and Devices",
}