A 64 × 64-pixel current-assisted photonic sampler (CAPS) image sensor is designed for real-time fluorescence lifetime (FLT) imaging. Current-assistance is used for swift detection and time-gating of the photogenerated carriers within the whole substrate. An additional bias node is used to decrease the dynamic power consumption and a photogate is applied to the sensor to reduce the carrier transfer time. The sensor is fabricated in a commercial 350 nm CMOS process on a 15 µm epi-layer, with 30 µm pixels and a 61 \% fill factor. The pixel features gating widths below 1 ns subject to a 17 ps standard deviation on the gate width uniformity, and a 31 ps standard deviation on its temporal position. The pixel has a quantum efficiency (QE) above 40 \% for near-infrared (NIR) wavelengths, whereas the peak QE is 61 \% at 675 nm. The gate{\textquoteright}s intrinsic decay is observed to be 320 ps, which allows for the FLT imaging of sub-nanosecond lifetime dyes. The real-time FLT imaging capabilities are demonstrated on commercial fluorescence phantoms and in a preclinical experiment.
Van Den Dries, T, Lapauw, T, Janssen, S, Sahakian, S, Lepoutte, T, Stroet, M, Hernot, S, Kuijk, M & Ingelberts, H 2024, '64 × 64-Pixel Current-Assisted Photonic Sampler Image Sensor and Camera System for Real-time Fluorescence Lifetime Imaging', IEEE Sensors Journal, vol. 24, no. 15, pp. 23729-23737. https://doi.org/10.1109/JSEN.2024.3409418
Van Den Dries, T., Lapauw, T., Janssen, S., Sahakian, S., Lepoutte, T., Stroet, M., Hernot, S., Kuijk, M., & Ingelberts, H. (2024). 64 × 64-Pixel Current-Assisted Photonic Sampler Image Sensor and Camera System for Real-time Fluorescence Lifetime Imaging. IEEE Sensors Journal, 24(15), 23729-23737. https://doi.org/10.1109/JSEN.2024.3409418
@article{67a97660afe4417ca2538e83bfd199fa,
title = "64 × 64-Pixel Current-Assisted Photonic Sampler Image Sensor and Camera System for Real-time Fluorescence Lifetime Imaging",
abstract = "A 64 × 64-pixel current-assisted photonic sampler (CAPS) image sensor is designed for real-time fluorescence lifetime (FLT) imaging. Current-assistance is used for swift detection and time-gating of the photogenerated carriers within the whole substrate. An additional bias node is used to decrease the dynamic power consumption and a photogate is applied to the sensor to reduce the carrier transfer time. The sensor is fabricated in a commercial 350 nm CMOS process on a 15 µm epi-layer, with 30 µm pixels and a 61 \% fill factor. The pixel features gating widths below 1 ns subject to a 17 ps standard deviation on the gate width uniformity, and a 31 ps standard deviation on its temporal position. The pixel has a quantum efficiency (QE) above 40 \% for near-infrared (NIR) wavelengths, whereas the peak QE is 61 \% at 675 nm. The gate{\textquoteright}s intrinsic decay is observed to be 320 ps, which allows for the FLT imaging of sub-nanosecond lifetime dyes. The real-time FLT imaging capabilities are demonstrated on commercial fluorescence phantoms and in a preclinical experiment.",
author = "\{Van Den Dries\}, Thomas and Thomas Lapauw and Simone Janssen and Sevada Sahakian and Theo Lepoutte and Marcus Stroet and Sophie Hernot and Maarten Kuijk and Hans Ingelberts",
note = "Publisher Copyright: IEEE",
year = "2024",
month = jun,
day = "10",
doi = "10.1109/JSEN.2024.3409418",
language = "English",
volume = "24",
pages = "23729--23737",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "15",
}