III-V semiconductor-based devices, in particular InP heterojunction bipolar transistors, are a strong contender for next-generation high-speed communication systems. In this paper, we present motivation for the upscaling of III-V technology on to 300 mm Si platforms. A comparison of various options for such III-V on Si technology is described. The challenges in the way to achieve its integration into existing CMOS platform and possibilities to overcome them are shown. We describe imec's path to demonstrate a CMOS compatible III-V-on-300 mm Si technology with the most recent results.
Vais, A, Kumar, A, Boccardi, G, Yadav, S, Mols, Y, Alcotte, R, Vermeersch, B, Ingels, M, Peralagu, U, Neve, CR, Ghyselen, B, Parvais, B, Wambacq, P, Kunert, B & Collaert, N 2024, A CMOS compatible III-v-on-300 mm SI technology for future high-speed communication systems: Challenges and possibilities. in Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications. River Publishers, pp. 27-40. <https://www.taylorfrancis.com/chapters/oa-edit/10.1201/9781003587309-4/cmos-compatible-iii-300-mm-si-technology-future-high-speed-communication-systems-possibilities-vais-kumar-boccardi-yadav-mols-alcotte-vermeersch-ingels-peralagu-roda-neve-ghyselen-parvais-wambacq-kunert-collaert?context=ubx&refId=f3fb291e-2c77-409a-b9da-a1b3814ac758>
Vais, A., Kumar, A., Boccardi, G., Yadav, S., Mols, Y., Alcotte, R., Vermeersch, B., Ingels, M., Peralagu, U., Neve, C. R., Ghyselen, B., Parvais, B., Wambacq, P., Kunert, B., & Collaert, N. (2024). A CMOS compatible III-v-on-300 mm SI technology for future high-speed communication systems: Challenges and possibilities. In Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications (pp. 27-40). River Publishers. https://www.taylorfrancis.com/chapters/oa-edit/10.1201/9781003587309-4/cmos-compatible-iii-300-mm-si-technology-future-high-speed-communication-systems-possibilities-vais-kumar-boccardi-yadav-mols-alcotte-vermeersch-ingels-peralagu-roda-neve-ghyselen-parvais-wambacq-kunert-collaert?context=ubx&refId=f3fb291e-2c77-409a-b9da-a1b3814ac758
@inbook{647a3d6998dc4e2ca804b3445d77d818,
title = "A CMOS compatible III-v-on-300 mm SI technology for future high-speed communication systems: Challenges and possibilities",
abstract = "III-V semiconductor-based devices, in particular InP heterojunction bipolar transistors, are a strong contender for next-generation high-speed communication systems. In this paper, we present motivation for the upscaling of III-V technology on to 300 mm Si platforms. A comparison of various options for such III-V on Si technology is described. The challenges in the way to achieve its integration into existing CMOS platform and possibilities to overcome them are shown. We describe imec's path to demonstrate a CMOS compatible III-V-on-300 mm Si technology with the most recent results.",
keywords = "6G, HBT, III-V, III-V on Si, InP",
author = "Abhitosh Vais and Annie Kumar and Guillaume Boccardi and Sachin Yadav and Yves Mols and Reynald Alcotte and Bjorn Vermeersch and Marc Ingels and Uthayasankaran Peralagu and Neve, \{Cesar Roda\} and Bruno Ghyselen and Bertrand Parvais and Piet Wambacq and Bernardette Kunert and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2024 River Publishers.",
year = "2024",
month = aug,
day = "22",
language = "English",
isbn = "9788770046640",
pages = "27--40",
booktitle = "Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications",
publisher = "River Publishers",
}