Publication Details
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Arno Hemelhof, Arno Hemelhof, Arno Hemelhof, Sehoon Park, Sehoon Park, Sehoon Park, Yang Zhang, Yang Zhang, Yang Zhang, Mark Ingels, Mark Ingels, Mark Ingels, Giuseppe Gramegna, Giuseppe Gramegna, Giuseppe Gramegna, Kristof Vaesen, Kristof Vaesen, Kristof Vaesen, Dongyang Yan, Dongyang Yan, Dongyang Yan, Piet Wambacq, Piet Wambacq, Piet Wambacq
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3\%. A small-signal gain of 14.2 dB is obtained with a 3-dB bandwidth of 19 GHz.

Reference ■
 
Hemelhof, A, Park, S, Zhang, Y, Ingels, M, Gramegna, G, Vaesen, K, Yan, D & Wambacq, P 2024, A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psatand 24.3 % PAE in a 250-nm InP HBT Technology. in 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, Institute of Electrical and Electronics Engineers Inc., pp. 185-188, 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, United States, 27/10/24. https://doi.org/10.1109/BCICTS59662.2024.10745714
Hemelhof, A., Park, S., Zhang, Y., Ingels, M., Gramegna, G., Vaesen, K., Yan, D., & Wambacq, P. (2024). A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psatand 24.3 % PAE in a 250-nm InP HBT Technology. In 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024 (pp. 185-188). (IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS59662.2024.10745714
@inproceedings{9424e1cefd13498080fd6c4cb864cca5,
title = "A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psatand 24.3 \% PAE in a 250-nm InP HBT Technology",
abstract = "This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3\%. A small-signal gain of 14.2 dB is obtained with a 3-dB bandwidth of 19 GHz.",
keywords = "common-base, D-band, InP, millimeter-wave, power amplifier, stacked PA",
author = "Arno Hemelhof and Sehoon Park and Yang Zhang and Mark Ingels and Giuseppe Gramegna and Kristof Vaesen and Dongyang Yan and Piet Wambacq",
note = "Funding Information: This work is supported by the Research Foundation-Flanders (FWO) project 1SH6T24N. Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024 ; Conference date: 27-10-2024 Through 30-10-2024",
year = "2024",
doi = "10.1109/BCICTS59662.2024.10745714",
language = "English",
isbn = "9798331541255",
series = "IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "185--188",
booktitle = "2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024",
address = "United States",
}