We demonstrate high linearity of fully processed GaN on 2-mm high resistivity (HR) Si wafers with high effective resistivity (\textbackslash{}rho\{\textbackslash{}mathbf \{eff\}\} > 2 \textbackslash{}text\{k\}\textbackslash{}Omega \textasciitilde{}\textbackslash{}cdot cm). Using two common-gate (MOS-)HEMT devices presenting different levels of distortion as demonstrators, we discuss the impact of substrate-induced harmonic distortion (HD) on RF switches. By comparing switch and CPW line measurements, it is possible to estimate the substrate contribution to HD. For the relatively nonlinear device, the intrinsic device nonlinearities dominate by a 16-20-dB margin over the substrate contribution. For a more linear device (-110 dBc of second harmonic power at 900 MHz and \{P\}\{\textbackslash{}mathbf \{in\}\} = 15 dBm), the substrate distortion contributes equally to channel nonlinearity, highlighting the necessity of engineering the substrate's RF performance together with the transistor. We provide guidelines for substrate \textbackslash{}rho\{\textbackslash{}mathbf \{eff\}\} to achieve good switch linearity for given device harmonic levels.
Cardinael, P, Yadav, S, Rack, M, Peralagu, U, Alian, A, Parvais, B, Collaert, N & Raskin, J-P 2024, 'Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity', IEEE Microwave and Wireless Technology Letters, vol. 34, no. 3, pp. 298-301. https://doi.org/10.1109/LMWT.2024.3355148
Cardinael, P., Yadav, S., Rack, M., Peralagu, U., Alian, A., Parvais, B., Collaert, N., & Raskin, J.-P. (2024). Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity. IEEE Microwave and Wireless Technology Letters, 34(3), 298-301. https://doi.org/10.1109/LMWT.2024.3355148
@article{44275ed1ac694a0885442bae341fb95b,
title = "Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity",
abstract = "We demonstrate high linearity of fully processed GaN on 2-mm high resistivity (HR) Si wafers with high effective resistivity (\textbackslash{}rho\{\textbackslash{}mathbf \{eff\}\} > 2 \textbackslash{}text\{k\}\textbackslash{}Omega \textasciitilde{}\textbackslash{}cdot cm). Using two common-gate (MOS-)HEMT devices presenting different levels of distortion as demonstrators, we discuss the impact of substrate-induced harmonic distortion (HD) on RF switches. By comparing switch and CPW line measurements, it is possible to estimate the substrate contribution to HD. For the relatively nonlinear device, the intrinsic device nonlinearities dominate by a 16-20-dB margin over the substrate contribution. For a more linear device (-110 dBc of second harmonic power at 900 MHz and \{P\}\{\textbackslash{}mathbf \{in\}\} = 15 dBm), the substrate distortion contributes equally to channel nonlinearity, highlighting the necessity of engineering the substrate's RF performance together with the transistor. We provide guidelines for substrate \textbackslash{}rho\{\textbackslash{}mathbf \{eff\}\} to achieve good switch linearity for given device harmonic levels.",
author = "Pieter Cardinael and Sachin Yadav and Martin Rack and Uthayasankaran Peralagu and Alireza Alian and Bertrand Parvais and Nadine Collaert and Jean-Pierre Raskin",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",
year = "2024",
doi = "10.1109/LMWT.2024.3355148",
language = "English",
volume = "34",
pages = "298--301",
journal = "IEEE Microwave and Wireless Technology Letters",
issn = "2771-957X",
publisher = "IEEE",
number = "3",
}