We report on charge capture and emission in Metal-Oxide-Semiconductor AlGaN/AlN/GaN High-Electron Mobility Transistors (MOS-HEMT) foreseen as power amplifiers in mm-wave user-equipment operating at RF frequencies. These devices target Enhancement mode operation, necessitating the incorporation of high-permittivity (high-?) dielectrics to mitigate barrier thinning induced leakage. It is shown that defects in the bulk of HfO2 or Al2O3 dielectrics result in significant Vt instabilities, with dielectric-dependent charge emission kinetics: band alignment between high-? shallow defect levels and AlGaN conduction band enables full (Al2O3) or partial (HfO2) charge de-trapping, while a deeper level in HfO2 enables trapping even at threshold conditions. The significance of this work lies in revealing the degradation modes present under DC which can also contribute at RF operating conditions.
O'Sullivan, BJ, Alian, A, Sibaja-Hernandez, A, Franco, J, Yadav, S, Yu, H, Rathi, A, Peralagu, U, Chasin, A, Parvais, B & Collaert, N 2024, DC Reliability Study of high-? GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. in 2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Proceedings. IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2024 IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, United States, 14/04/24. https://doi.org/10.1109/IRPS48228.2024.10529379
O'Sullivan, B. J., Alian, A., Sibaja-Hernandez, A., Franco, J., Yadav, S., Yu, H., Rathi, A., Peralagu, U., Chasin, A., Parvais, B., & Collaert, N. (2024). DC Reliability Study of high-? GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. In 2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Proceedings (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS48228.2024.10529379
@inproceedings{3235c18f6367417f88f621b0c94c5f91,
title = "DC Reliability Study of high-? GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers",
abstract = "We report on charge capture and emission in Metal-Oxide-Semiconductor AlGaN/AlN/GaN High-Electron Mobility Transistors (MOS-HEMT) foreseen as power amplifiers in mm-wave user-equipment operating at RF frequencies. These devices target Enhancement mode operation, necessitating the incorporation of high-permittivity (high-?) dielectrics to mitigate barrier thinning induced leakage. It is shown that defects in the bulk of HfO2 or Al2O3 dielectrics result in significant Vt instabilities, with dielectric-dependent charge emission kinetics: band alignment between high-? shallow defect levels and AlGaN conduction band enables full (Al2O3) or partial (HfO2) charge de-trapping, while a deeper level in HfO2 enables trapping even at threshold conditions. The significance of this work lies in revealing the degradation modes present under DC which can also contribute at RF operating conditions. ",
keywords = "capture, defect, emission, GaN-on-Si, MOS-HEMT",
author = "O'Sullivan, {B. J.} and A. Alian and A. Sibaja-Hernandez and J. Franco and S. Yadav and H. Yu and A. Rathi and U. Peralagu and A. Chasin and B. Parvais and N. Collaert",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE International Reliability Physics Symposium, IRPS 2024 ; Conference date: 14-04-2024 Through 18-04-2024",
year = "2024",
doi = "10.1109/IRPS48228.2024.10529379",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Proceedings",
address = "United States",
}