In this paper, a two-stage Ka-band power amplifier (PA) utilizing a sub-quarter-wavelength (SQWL) balun is presented for efficient and compact series power combining. The differential two-stage PA includes a high-order interstage matching network to suppress AM-PM distortion without the addition of additional active devices. The PA is fabricated using a 150nm GaN technology and produces over 32 dB m output power across a frequency range of 26–30 GHz. The differential pair plus SQWL balun occupies a small area of only 0.4mm 2 , resulting in a high power density of 5.725 W/mm 2 • The presented PA is among the highest in power & efficiency achieved with a differential-end PA at Ka-band frequency range in G a N technologies.
Yan, D, zhang, Y, Peumans, D, Ingels, M & Wambacq, P 2023, A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications. in 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023. IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, IEEE, pp. 70-73, 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Monterey, California, United States, 16/10/23. https://doi.org/10.1109/BCICTS54660.2023.10310970
Yan, D., zhang, Y., Peumans, D., Ingels, M., & Wambacq, P. (2023). A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications. In 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023 (pp. 70-73). (IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium). IEEE. https://doi.org/10.1109/BCICTS54660.2023.10310970
@inproceedings{d7f439dbbea0436b9d949779254edf88,
title = "A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications",
abstract = "In this paper, a two-stage Ka-band power amplifier (PA) utilizing a sub-quarter-wavelength (SQWL) balun is presented for efficient and compact series power combining. The differential two-stage PA includes a high-order interstage matching network to suppress AM-PM distortion without the addition of additional active devices. The PA is fabricated using a 150nm GaN technology and produces over 32 dB m output power across a frequency range of 26–30 GHz. The differential pair plus SQWL balun occupies a small area of only 0.4mm 2 , resulting in a high power density of 5.725 W/mm 2 • The presented PA is among the highest in power & efficiency achieved with a differential-end PA at Ka-band frequency range in G a N technologies.",
keywords = "Gallium Nitride, differential-end power amplifier, sub-quarter-wavelength balun",
author = "Dongyang Yan and yang zhang and Dries Peumans and Mark Ingels and Piet Wambacq",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), BCICTS 2023 ; Conference date: 16-10-2023 Through 18-10-2023",
year = "2023",
month = oct,
doi = "10.1109/BCICTS54660.2023.10310970",
language = "English",
isbn = "979-8-3503-0765-8",
series = "IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium",
publisher = "IEEE",
pages = "70--73",
booktitle = "2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023",
url = "https://bcicts.org/",
}