Thin channel GaN HEMTs intended for mm-wave operation suffer from increased on-resistance (RON) dispersion, limiting their large-signal performance. This work establishes a composite AlGaN/cGaN back barrier (BB) as a plausible solution to reduce the trapping in the BB while improving the 2DEG confinement. Large-signal characterisation at 28GHz, using source-and load-pull, indicates a significant improvement in PSAT and PAE for devices with an AlGaN/cGaN BB, compared to those with a cGaN BB only, due to their lower current collapse.
Elkashlan, R, Yu, H, Khaled, A, Yadav, S, Peralagu, U, Alian, A, Collaert, N, Wambacq, P & Parvais, B 2023, A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. in European Solid-State Device Research Conference. European Solid-State Device Research Conference, vol. 2023-September. https://doi.org/10.1109/ESSDERC59256.2023.10268539
Elkashlan, R., Yu, H., Khaled, A., Yadav, S., Peralagu, U., Alian, A., Collaert, N., Wambacq, P., & Parvais, B. (2023). A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. In European Solid-State Device Research Conference (European Solid-State Device Research Conference; Vol. 2023-September). https://doi.org/10.1109/ESSDERC59256.2023.10268539
@inproceedings{7a2409306934468fa2ec00cf033f221d,
title = "A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs",
abstract = "Thin channel GaN HEMTs intended for mm-wave operation suffer from increased on-resistance (RON) dispersion, limiting their large-signal performance. This work establishes a composite AlGaN/cGaN back barrier (BB) as a plausible solution to reduce the trapping in the BB while improving the 2DEG confinement. Large-signal characterisation at 28GHz, using source-and load-pull, indicates a significant improvement in PSAT and PAE for devices with an AlGaN/cGaN BB, compared to those with a cGaN BB only, due to their lower current collapse. ",
author = "R. Elkashlan and H. Yu and A. Khaled and S. Yadav and U. Peralagu and A. Alian and N. Collaert and P. Wambacq and B. Parvais",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",
year = "2023",
doi = "10.1109/ESSDERC59256.2023.10268539",
language = "English",
isbn = "9798350304237",
series = "European Solid-State Device Research Conference",
booktitle = "European Solid-State Device Research Conference",
}