To achieve the increased throughput that future communication systems will require, wider bandwidths must be exploited. While complementary metal-oxide semiconductor (CMOS) is in general the technology of choice, compound semiconductors like GaN and InP might be the better choice for especially the transmit side of the radio. Co-integrating CMOS front ends with for example, InP power amplifiers promises savings of 2x or more in power consumption and array size. As the ultimate 6G architecture is envisioned to be hybrid, heterogeneous integration is becoming an important topic. Techniques going from monolithic integration to 2.5D interposer to 3D integration are being considered. In this work, we have lifted out the co-integration of CMOS and compound semiconductors for millimeter-wave and sub-THz frequencies.
Collaert, N 2024, Introduction to 5G applications and beyond. in New Materials and Devices Enabling 5G Applications and Beyond. Elsevier, pp. 1-32. https://doi.org/10.1016/B978-0-12-822823-4.00001-7
Collaert, N. (2024). Introduction to 5G applications and beyond. In New Materials and Devices Enabling 5G Applications and Beyond (pp. 1-32). Elsevier. https://doi.org/10.1016/B978-0-12-822823-4.00001-7
@inbook{d853f9b8cda8470f8045a8e9e9112898,
title = "Introduction to 5G applications and beyond",
abstract = "To achieve the increased throughput that future communication systems will require, wider bandwidths must be exploited. While complementary metal-oxide semiconductor (CMOS) is in general the technology of choice, compound semiconductors like GaN and InP might be the better choice for especially the transmit side of the radio. Co-integrating CMOS front ends with for example, InP power amplifiers promises savings of 2x or more in power consumption and array size. As the ultimate 6G architecture is envisioned to be hybrid, heterogeneous integration is becoming an important topic. Techniques going from monolithic integration to 2.5D interposer to 3D integration are being considered. In this work, we have lifted out the co-integration of CMOS and compound semiconductors for millimeter-wave and sub-THz frequencies.",
keywords = "5G, bandwidths, Complementary metal-oxide semiconductor, compound semiconductors, frequencies, heterogeneous integration, wave, wireless communication",
author = "Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2024 Elsevier Inc. All rights reserved.",
year = "2024",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-822823-4.00001-7",
language = "English",
isbn = "9780128234501",
pages = "1--32",
booktitle = "New Materials and Devices Enabling 5G Applications and Beyond",
publisher = "Elsevier",
address = "Netherlands",
}