Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2 K.
Beckers, A, Michl, J, Grill, A, Kaczer, B, Bardon, MG, Parvais, B, Govoreanu, B, Greve, KD, Hiblot, G & Hellings, G 2023, 'Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing', IEEE Transactions on Nanotechnology, vol. 22, pp. 590 - 596. https://doi.org/10.1109/TNANO.2023.3314811
Beckers, A., Michl, J., Grill, A., Kaczer, B., Bardon, M. G., Parvais, B., Govoreanu, B., Greve, K. D., Hiblot, G., & Hellings, G. (2023). Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing. IEEE Transactions on Nanotechnology, 22, 590 - 596. https://doi.org/10.1109/TNANO.2023.3314811
@article{79a320c0c3524309a22e8cbbfa87d844,
title = "Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing",
abstract = "Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2 K.",
author = "Arnout Beckers and Jakob Michl and Alexander Grill and Ben Kaczer and Bardon, {Marie Garcia} and Bertrand Parvais and Bogdan Govoreanu and Greve, {Kristiaan De} and Gaspard Hiblot and Geert Hellings",
note = "Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",
year = "2023",
month = sep,
doi = "10.1109/TNANO.2023.3314811",
language = "English",
volume = "22",
pages = "590 -- 596",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "IEEE",
}