This letter presents a D -band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB bandwidth greater than 20 GHz (120–140 GHz), and a measured noise figure (NF) of less than 6 dB in the band. A reduction in the 3-dB bandwidth from simulation was observed during the measurements which was attributed to the substrate waves using full chip electromagnetic (EM) simulation. EM simulations show that a partial or complete removal of the back side metallization of the InP substrate, holes in metal-1 ground plane, or a strategic placement of through-substrate vias suppress these substrate waves. To the authors{\textquoteright} knowledge, this is the first 120–140-GHz LNA in the InP 250-nm HBT technology.
Chauhan, V, Collaert, N & Wambacq, P 2022, 'A 120-140-GHz LNA in 250-nm InP HBT', IEEE Microwave and Wireless Components Letters, vol. 32, no. 11, pp. 1315-1318. https://doi.org/10.1109/LMWC.2022.3189607
Chauhan, V., Collaert, N., & Wambacq, P. (2022). A 120-140-GHz LNA in 250-nm InP HBT. IEEE Microwave and Wireless Components Letters, 32(11), 1315-1318. https://doi.org/10.1109/LMWC.2022.3189607
@article{90377d17e55e44649c301ae28ad4d36e,
title = "A 120-140-GHz LNA in 250-nm InP HBT",
abstract = "This letter presents a D -band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB bandwidth greater than 20 GHz (120–140 GHz), and a measured noise figure (NF) of less than 6 dB in the band. A reduction in the 3-dB bandwidth from simulation was observed during the measurements which was attributed to the substrate waves using full chip electromagnetic (EM) simulation. EM simulations show that a partial or complete removal of the back side metallization of the InP substrate, holes in metal-1 ground plane, or a strategic placement of through-substrate vias suppress these substrate waves. To the authors{\textquoteright} knowledge, this is the first 120–140-GHz LNA in the InP 250-nm HBT technology.",
keywords = "6G, III-V devices, D-band, integrated circuits (ICs), low-noise amplifier (LNA), millimeter wave circuits, wideband",
author = "Vikas Chauhan and Nadine Collaert and Piet Wambacq",
note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE. Copyright: Copyright 2022 Elsevier B.V., All rights reserved.",
year = "2022",
month = nov,
day = "1",
doi = "10.1109/LMWC.2022.3189607",
language = "English",
volume = "32",
pages = "1315--1318",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}