This work investigates scaling of the GaN channel thickness on top of a carbon-doped GaN buffer (cGaN) grown on 200mm Si substrates. Device performance tradeoffs are analyzed in terms of DC, RF, reliability and thermal behavior. A thinner channel improves DIBL, Ioff,Vth roll-off and degrades fT,fmax , PAE, Pout, charge trapping and thermal conductance characteristics. Transconductance was observed to increase under high saturation drain bias for thin and short channels indicating the lateral device scaling potential of cGaN based HEMTs.
Alian, A, Rodriguez, R, Yadav, S, Peralagu, U, Sibaja-Hernandez, A, Putcha, V, Zhao, M, ElKashlan, R, Vermeersch, B, Yu, H, Bury, E, Khaled, A, Collaert, N & Parvais, B 2022, Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC). European Solid-State Device Research Conference, vol. 2022-September, Institute of Electrical and Electronics Engineers Inc., pp. 384-387, IEEE 52nd European Solid-State Device Research Conference (ESSDERC), Milan, Italy, 19/09/22. https://doi.org/10.1109/ESSDERC55479.2022.9947147
Alian, A., Rodriguez, R., Yadav, S., Peralagu, U., Sibaja-Hernandez, A., Putcha, V., Zhao, M., ElKashlan, R., Vermeersch, B., Yu, H., Bury, E., Khaled, A., Collaert, N., & Parvais, B. (2022). Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. In ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (pp. 384-387). (European Solid-State Device Research Conference; Vol. 2022-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESSDERC55479.2022.9947147
@inproceedings{978c0e62e3f5485aa4648cef4ca3c51e,
title = "Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer",
abstract = "This work investigates scaling of the GaN channel thickness on top of a carbon-doped GaN buffer (cGaN) grown on 200mm Si substrates. Device performance tradeoffs are analyzed in terms of DC, RF, reliability and thermal behavior. A thinner channel improves DIBL, Ioff,Vth roll-off and degrades fT,fmax , PAE, Pout, charge trapping and thermal conductance characteristics. Transconductance was observed to increase under high saturation drain bias for thin and short channels indicating the lateral device scaling potential of cGaN based HEMTs.",
keywords = "Radio frequency, Performance evaluation, Thermal analysis, Reliability, MODFETs, HEMTs, Thermal conductivity",
author = "AliReza Alian and Raul Rodriguez and Sachin Yadav and Uthayasankaran Peralagu and Arturo Sibaja-Hernandez and Vamsi Putcha and Ming Zhao and Rana ElKashlan and Bjorn Vermeersch and Hao Yu and Erik Bury and Ahmad Khaled and Nadine Collaert and Bertrand Parvais",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE. Copyright: Copyright 2022 Elsevier B.V., All rights reserved.; IEEE 52nd European Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 ; Conference date: 19-09-2022 Through 22-09-2022",
year = "2022",
month = nov,
day = "18",
doi = "10.1109/ESSDERC55479.2022.9947147",
language = "English",
isbn = "978-1-6654-8498-5",
series = "European Solid-State Device Research Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "384--387",
booktitle = "ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)",
address = "United States",
}