Saurabh, N., Patil, S., Rawat, A., Chiarella, T., Parvais, B., & Ganguly, U. (2022). Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET. IEEE Electron Device Letters, 43(8), 1171 - 1174. https://doi.org/10.1109/LED.2022.3185025

@article{9735707f55b24104bebddf21e013a291,
title = "Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET",
abstract = "Spacers with low dielectric constant have been significantly explored in the literature to reduce delay due to the parasitic capacitance. However, it substantially increases parasitic resistance due to Dielectric and Quantum Confinement based Dopant Deactivation (DQC-DD). In this letter, we have investigated the experimental signature of DQC-DD in the extension region of the FinFET and observed a significant reduction in the ON current due to it. Hence, it is essential to include DQC-DD into the simulation of FinFET, particularly those with narrow fin width, for the correct prediction of delay following the experiment.",
author = "Nishant Saurabh and Shubham Patil and Amita Rawat and Thomas Chiarella and Bertrand Parvais and Udayan Ganguly",
note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2022",
month = aug,
doi = "10.1109/LED.2022.3185025",
language = "English",
volume = "43",
pages = "1171 -- 1174",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "IEEE",
number = "8",
}