Publication Details
Overview
 
 
Rana Yasser ElKashlan, Rana Yasser ElKashlan, Ahmad Khaled, Ahmad Khaled, Raul Rodriguez, Raul Rodriguez, Vamsi Putcha, Vamsi Putcha, Uthayasankaran Peralagu, Uthayasankaran Peralagu, Alireza Alian, Alireza Alian, Nadine Collaert, Nadine Collaert, Piet Wambacq, Piet Wambacq, Bertrand Parvais, Bertrand Parvais
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

We investigate the effect of varying the gate-to-drain spacing and the gate field-plate on the device linearity of GaN HEMTs on Si for 0.11μm, 0.15μm, and 0.19μm gate lengths. The gain compression, phase distortion, and harmonic distortion metrics are measured using a nonlinear characterisation setup calibrated at 6GHz up to the third harmonic. The acquired nonlinearity metrics are correlated with the extrinsic device parasitics extracted from S-parameter measurements. We observe that excessive gate field-plate length scaling down to 0.05μm lowers the total phase distortion at the expense of gain linearity and harmonic distortion in Class AB while minimising the gate-to-drain spacing alleviates the harmonic distortion only for devices of 0.19μm gate length. Further evaluation, under matched conditions, using a passive load-pull measurement setup points to a decline in the peak achievable PAE and PSAT at gate field-plates smaller than 0.12μm.

Reference ■
 
ElKashlan, R, Khaled, A, Rodriguez, R, Putcha, V, Peralagu, U, Alian, A, Collaert, N, Wambacq, P & Parvais, B 2022, Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation. in 2021 16th European Microwave Integrated Circuits Conference (EuMIC). EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference, IEEE, pp. 30-33, European Microwave Week, London, United Kingdom, 2/04/22. https://doi.org/10.23919/eumic50153.2022.9783630
ElKashlan, R., Khaled, A., Rodriguez, R., Putcha, V., Peralagu, U., Alian, A., Collaert, N., Wambacq, P., & Parvais, B. (2022). Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation. In 2021 16th European Microwave Integrated Circuits Conference (EuMIC) (pp. 30-33). (EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference). IEEE. https://doi.org/10.23919/eumic50153.2022.9783630
@inproceedings{e098ad0fa1464641b9c72da6d6cda55b,
title = "Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation",
abstract = "We investigate the effect of varying the gate-to-drain spacing and the gate field-plate on the device linearity of GaN HEMTs on Si for 0.11μm, 0.15μm, and 0.19μm gate lengths. The gain compression, phase distortion, and harmonic distortion metrics are measured using a nonlinear characterisation setup calibrated at 6GHz up to the third harmonic. The acquired nonlinearity metrics are correlated with the extrinsic device parasitics extracted from S-parameter measurements. We observe that excessive gate field-plate length scaling down to 0.05μm lowers the total phase distortion at the expense of gain linearity and harmonic distortion in Class AB while minimising the gate-to-drain spacing alleviates the harmonic distortion only for devices of 0.19μm gate length. Further evaluation, under matched conditions, using a passive load-pull measurement setup points to a decline in the peak achievable PAE and PSAT at gate field-plates smaller than 0.12μm.",
author = "Rana ElKashlan and Ahmad Khaled and Raul Rodriguez and Vamsi Putcha and Uthayasankaran Peralagu and AliReza Alian and Nadine Collaert and Piet Wambacq and Bertrand Parvais",
year = "2022",
month = apr,
day = "3",
doi = "10.23919/eumic50153.2022.9783630",
language = "English",
isbn = "978-1-6654-4722-5",
series = "EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference",
publisher = "IEEE",
pages = "30--33",
booktitle = "2021 16th European Microwave Integrated Circuits Conference (EuMIC)",
note = "European Microwave Week : United in Microwaves, EuMW ; Conference date: 02-04-2022 Through 07-04-2022",
url = "https://www.eumw2021.com/",
}