Low-dose high-energy ion implantation is effective for isolating GaN high-electron-mobility transistors (HEMTs). However, lateral penetration of implanted ions induces damages at sides of AlGaN/AlN/GaN HEMTs and causes parasitic channel formation. By comparing ion implantation isolated HEMTs with varied widths, the parasitic channel behavior is characterized: the parasitic channel shows low on-state conductance, reduced gate current, and more positive threshold voltage compared to the active HEMT channel. The high N ion implantation energy for HEMT isolation was up to 375 keV, and the effective widths of HEMTs are narrowed by \textasciitilde{} 0.5 µm. The electrical characteristics of the parasitic channel are theoretically understood by considering ionization of point defect generated in the AlGaN/AlN/GaN heterostructures. Graphical abstract: [Figure not available: see fulltext.].
Yu, H, Peralagu, U, Alian, A, Zhao, M, Parvais, B & Collaert, N 2022, 'Parasitic side channel formation due to ion implantation isolation of GaN HEMT', MRS Advances, vol. 7, no. 36, pp. 1274-1278. https://doi.org/10.1557/s43580-022-00453-6
Yu, H., Peralagu, U., Alian, A., Zhao, M., Parvais, B., & Collaert, N. (2022). Parasitic side channel formation due to ion implantation isolation of GaN HEMT. MRS Advances, 7(36), 1274-1278. https://doi.org/10.1557/s43580-022-00453-6
@article{242cfc61d9ee4a70aa9210236627f1a4,
title = "Parasitic side channel formation due to ion implantation isolation of GaN HEMT",
abstract = "Low-dose high-energy ion implantation is effective for isolating GaN high-electron-mobility transistors (HEMTs). However, lateral penetration of implanted ions induces damages at sides of AlGaN/AlN/GaN HEMTs and causes parasitic channel formation. By comparing ion implantation isolated HEMTs with varied widths, the parasitic channel behavior is characterized: the parasitic channel shows low on-state conductance, reduced gate current, and more positive threshold voltage compared to the active HEMT channel. The high N ion implantation energy for HEMT isolation was up to 375 keV, and the effective widths of HEMTs are narrowed by \textasciitilde{} 0.5 µm. The electrical characteristics of the parasitic channel are theoretically understood by considering ionization of point defect generated in the AlGaN/AlN/GaN heterostructures. Graphical abstract: [Figure not available: see fulltext.].",
author = "Hao Yu and Uthayasankaran Peralagu and Alireza Alian and Ming Zhao and Bertrand Parvais and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to The Materials Research Society.",
year = "2022",
month = dec,
day = "1",
doi = "10.1557/s43580-022-00453-6",
language = "English",
volume = "7",
pages = "1274--1278",
journal = "MRS Advances",
issn = "2059-8521",
publisher = "Springer",
number = "36",
}