This paper presents a Doherty power amplifier (PA) in 22nm FD-SOI for achieving high output power and high backoff efficiency for 28GHz 5G communications. The output stage of the main PA and the auxiliary PA both use a stacked-FET topology for high output power without posing a reliability issue. A dedicated transformer-based output matching network is proposed to achieve a true Doherty load modulation while maintaining a compact layout. The PA is fabricated in a 22nm FD-SOI technology with a core area of 0.2mm2. At 28GHz, the measured saturated output power (Psat), 1dB output compression point (P1dB), and peak power-added efficiency (PAE) are 22.5dBm, 21.1dBm, and 28.5%, respectively. State-of-the-art ITRS figure-of-merit (FOM) and power density are achieved. The measured 6dB power back-off (PBO) PAE is 22.1%, which results in a PBO enhancement ratio of 1.56/3.12 with respect to a class-B/class-A PA. The proposed PA can support 2.4Gb/s 64-QAM and 0.8Gb/s 256-QAM signal with a competitive average PAE.
Zong, Z, Tang, X, Khalaf, K , Yan, D , Mangraviti, G, Nguyen, JH-D, Liu, Y & Wambacq, P 2020, A 28GHz Voltage-Combined Doherty Power Amplifier with a Compact Transformer-based Output Combiner in 22nm FD-SOI . in 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, pp. 1-4, 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 4/08/20 .
Zong, Z., Tang, X., Khalaf, K. , Yan, D. , Mangraviti, G., Nguyen, J. H-D., Liu, Y. , & Wambacq, P. (2020). A 28GHz Voltage-Combined Doherty Power Amplifier with a Compact Transformer-based Output Combiner in 22nm FD-SOI . In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (pp. 1-4). IEEE.
@inproceedings{5c2a9d38c3e648569e8713ec947d2ba0,
title = " A 28GHz Voltage-Combined Doherty Power Amplifier with a Compact Transformer-based Output Combiner in 22nm FD-SOI " ,
abstract = " This paper presents a Doherty power amplifier (PA) in 22nm FD-SOI for achieving high output power and high backoff efficiency for 28GHz 5G communications. The output stage of the main PA and the auxiliary PA both use a stacked-FET topology for high output power without posing a reliability issue. A dedicated transformer-based output matching network is proposed to achieve a true Doherty load modulation while maintaining a compact layout. The PA is fabricated in a 22nm FD-SOI technology with a core area of 0.2mm2. At 28GHz, the measured saturated output power (Psat), 1dB output compression point (P1dB), and peak power-added efficiency (PAE) are 22.5dBm, 21.1dBm, and 28.5%, respectively. State-of-the-art ITRS figure-of-merit (FOM) and power density are achieved. The measured 6dB power back-off (PBO) PAE is 22.1%, which results in a PBO enhancement ratio of 1.56/3.12 with respect to a class-B/class-A PA. The proposed PA can support 2.4Gb/s 64-QAM and 0.8Gb/s 256-QAM signal with a competitive average PAE. " ,
author = " Zhiwei Zong and Xinyan Tang and Khaled Khalaf and Dongyang Yan and Giovanni Mangraviti and Nguyen, {Johan Hoang-Dung} and Yao Liu and Piet Wambacq " ,
note = " Publisher Copyright: { extcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved. 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Conference date: 04-08-2020 Through 06-08-2020 " ,
year = " 2020 " ,
month = aug,
doi = " 10.1109/rfic49505.2020.9218280 " ,
language = " English " ,
isbn = " 9781728168098 " ,
pages = " 14 " ,
booktitle = " 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) " ,
publisher = " IEEE " ,
}