Publication Details
Zhiwei Zong, Xinyan Tang, Khaled Khalaf, Dongyang Yan, Giovanni Mangraviti, Johan Nguyen, Johan Nguyen, Yao Liu, Piet Wambacq

2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

Contribution To Book Anthology


This paper presents a Doherty power amplifier (PA) in 22nm FD-SOI for achieving high output power and high backoff efficiency for 28GHz 5G communications. The output stage of the main PA and the auxiliary PA both use a stacked-FET topology for high output power without posing a reliability issue. A dedicated transformer-based output matching network is proposed to achieve a true Doherty load modulation while maintaining a compact layout. The PA is fabricated in a 22nm FD-SOI technology with a core area of 0.2mm2. At 28GHz, the measured saturated output power (Psat), 1dB output compression point (P1dB), and peak power-added efficiency (PAE) are 22.5dBm, 21.1dBm, and 28.5%, respectively. State-of-the-art ITRS figure-of-merit (FOM) and power density are achieved. The measured 6dB power back-off (PBO) PAE is 22.1%, which results in a PBO enhancement ratio of 1.56/3.12 with respect to a class-B/class-A PA. The proposed PA can support 2.4Gb/s 64-QAM and 0.8Gb/s 256-QAM signal with a competitive average PAE.