Cardinael, P., Yadav, S., Zhao, M., Rack, M., Lederer, D., Collaert, N., Parvais, B., & Raskin, J. P. (2022). Time Dependence of RF Losses in GaN-on-Si Substrates. IEEE Microwave and Wireless Components Letters, 32(6), 688-691. https://doi.org/10.1109/LMWC.2022.3162028

@article{2ed6712b73704983a8dc628dfd1c1b2e,
title = "Time Dependence of RF Losses in GaN-on-Si Substrates",
abstract = "GaN-on-Si HEMT technology suffers from RF losses and non-linearities originating from the conductive Si substrate. The understanding and modeling of substrate performance are the keys to enabling next-generation front-end modules. In this letter, we show that when subjected to a chuck bias step, the effective substrate resistivity of a typical \$C\$ -doped HEMT stack shows a dynamic behavior. Using a dedicated setup, stress/relaxation sequences at different temperatures are performed to understand this phenomenon. With the help of TCAD simulations, it is shown that redistribution of charges trapped in deep defects located in the III-N buffer can qualitatively explain the observed trends. Trap activation energies of 0.43 and 0.33 eV are extracted from measured data.",
keywords = "C-doped buffers, CPW lines, GaN-on-Si, RF losses, effective substrate resistivity, traps",
author = "Pieter Cardinael and Sachin Yadav and Ming Zhao and Martin Rack and Dimitri Lederer and Nadine Collaert and Bertrand Parvais and Raskin, \{Jean Pierre\}",
note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",
year = "2022",
month = jun,
day = "1",
doi = "10.1109/LMWC.2022.3162028",
language = "English",
volume = "32",
pages = "688--691",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}