This paper presents a D-band front-end module (FEM) with an integrated transmit/receive (T/R) switch in 22-nm fully-depleted silicon on insulator (FD-SOI) CMOS technology for beyond-5G communication. The asymmetric T/R switch topology with intrinsic ESD protection leverages the Tx- and Rx-mode RF performance. Both the PA and LNA have a differential topology with transformer-based matching networks to eliminate unwanted effects from common-mode parasitics, especially at the antenna port. The adopted stacked-FET PA achieves a high output power while consuming much less area than a PA based on passive power combining. At 140 GHz, the Tx achieves a power gain $G_{p}$ of 33.6 / 35.7 dB, a saturated output power Psat of 12.5 / 14.7 dBm, a peak power-added efficiency PAE of 10.8 / 11.3%, and output 1-dB compression point (OP1dB) of 9.4 / 11.2 dBm with nominal/boosted supplies. At 140 GHz, the Rx achieves a 20-dB $G_{p}$, a -24-dBm input 1-dB compression point (IP1dB), and a 9.2-dB noise figure (NF) with only 20-mW power consumption from a 0.8-V supply. This compact FEM has a PA / LNA core area of 0.024 / 0.032 mm2, respectively.
Tang, X, Nguyen, J, Mangraviti, G, Zong, Z & Wambacq, P 2021, A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS. in 2021 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2021., 9490470, 2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), IEEE, pp. 35-38, 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Atlanta, United States, 7/06/21. https://doi.org/10.1109/RFIC51843.2021.9490470
Tang, X., Nguyen, J., Mangraviti, G., Zong, Z., & Wambacq, P. (2021). A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS. In 2021 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2021 (pp. 35-38). Article 9490470 (2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC)). IEEE. https://doi.org/10.1109/RFIC51843.2021.9490470
@inproceedings{01baf0e8df5b47b892adf0bcb64f9b1d,
title = "A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS",
abstract = "This paper presents a D-band front-end module (FEM) with an integrated transmit/receive (T/R) switch in 22-nm fully-depleted silicon on insulator (FD-SOI) CMOS technology for beyond-5G communication. The asymmetric T/R switch topology with intrinsic ESD protection leverages the Tx- and Rx-mode RF performance. Both the PA and LNA have a differential topology with transformer-based matching networks to eliminate unwanted effects from common-mode parasitics, especially at the antenna port. The adopted stacked-FET PA achieves a high output power while consuming much less area than a PA based on passive power combining. At 140 GHz, the Tx achieves a power gain $G_{p}$ of 33.6 / 35.7 dB, a saturated output power Psat of 12.5 / 14.7 dBm, a peak power-added efficiency PAE of 10.8 / 11.3%, and output 1-dB compression point (OP1dB) of 9.4 / 11.2 dBm with nominal/boosted supplies. At 140 GHz, the Rx achieves a 20-dB $G_{p}$, a -24-dBm input 1-dB compression point (IP1dB), and a 9.2-dB noise figure (NF) with only 20-mW power consumption from a 0.8-V supply. This compact FEM has a PA / LNA core area of 0.024 / 0.032 mm2, respectively. ",
author = "Xinyan Tang and Johan Nguyen and Giovanni Mangraviti and Zhiwei Zong and Piet Wambacq",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ; Conference date: 07-06-2021 Through 09-06-2021",
year = "2021",
month = jun,
day = "7",
doi = "10.1109/RFIC51843.2021.9490470",
language = "English",
series = "2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC)",
publisher = "IEEE",
pages = "35--38",
booktitle = "2021 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2021",
url = "https://rfic-ieee.org/",
}