Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., & Waltl, M. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(12), 6372 - 6378. https://doi.org/10.1109/TED.2021.3117740

@article{20aa02ffae3749758a05f326c7e33848,
title = "Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental",
abstract = "We present time-zero characterization and an investigation on bias temperature instability (BTI) degradation between 4 and 300 K on large area high-kCMOS devices. Our measurements show that negative BTI (NBTI) on pMOSFETs freezes out when approaching cryogenic temperatures, whereas there is still significant positive BTI (PBTI) degradation in nMOSFETs even at 4 K. To explain this behavior, we use an efficient implementation of the quantum mechanical nonradiative multiphonon charge trapping model presented in Part I and extract two separate trap bands in the SiO2 and HfO2 layer. We show that NBTI is dominated by defects in the SiO2 layer, whereas PBTI arises mainly from defects in the HfO2 layer, which are weakly recoverable and do not freeze out at low temperatures due to dominant nuclear tunneling at the defect site.",
author = "Jakob Michl and Alexander Grill and Dominic Waldhoer and Wolfgang Goes and Ben Kaczer and Dimitri Linten and Bertrand Parvais and Bogdan Govoreanu and Iuliana Radu and Tibor Grasser and Michael Waltl",
note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2021",
month = dec,
doi = "10.1109/TED.2021.3117740",
language = "English",
volume = "68",
pages = "6372 -- 6378",
journal = "IEEE TRANSACTIONS ON ELECTRON DEVICES",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}