In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).
Glória Caño de Andrade, M, Felipe de Oliveira Bergamim, L, Baptista Júnior, B, Roberto Nogueira, C, Alex da Silva, F, Takakura, K, Parvais, B & Simoen, E 2021, 'Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors', Solid-State Electronics, vol. 183, 108050. https://doi.org/10.1016/j.sse.2021.108050
Glória Caño de Andrade, M., Felipe de Oliveira Bergamim, L., Baptista Júnior, B., Roberto Nogueira, C., Alex da Silva, F., Takakura, K., Parvais, B., & Simoen, E. (2021). Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors. Solid-State Electronics, 183, Article 108050. https://doi.org/10.1016/j.sse.2021.108050
@article{d8354b9132634cdcadd125b571a334bb,
title = "Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors",
abstract = "In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).",
keywords = "GaN/AlGaN, HEMT, High-temperature, Low-frequency noise",
author = "{Gl{\'o}ria Ca{\~n}o de Andrade}, Maria and {Felipe de Oliveira Bergamim}, Luis and {Baptista J{\'u}nior}, Braz and {Roberto Nogueira}, Carlos and {Alex da Silva}, F{\'a}bio and Kenichiro Takakura and Bertrand Parvais and Eddy Simoen",
year = "2021",
month = sep,
doi = "10.1016/j.sse.2021.108050",
language = "English",
volume = "183",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier",
}