current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.
Jegannathan, G, Ingelberts, H & Kuijk, M 2020, 'Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS', Applied Sciences, vol. 10, no. 6, 2155. https://doi.org/10.3390/app10062155
Jegannathan, G., Ingelberts, H., & Kuijk, M. (2020). Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS. Applied Sciences, 10(6), Article 2155. https://doi.org/10.3390/app10062155
@article{bb6df239659a4df8b1e445c48bc9d45d,
title = "Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS",
abstract = "current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.",
author = "Gobinath Jegannathan and Hans Ingelberts and Maarten Kuijk",
year = "2020",
month = mar,
day = "22",
doi = "10.3390/app10062155",
language = "English",
volume = "10",
journal = "Applied Sciences",
issn = "2076-3417",
publisher = "MDPI",
number = "6",
}