Integrating an optical receiver in CMOS optimized for near infrared light (NIR) remains appealing but at the same time challenging due to the deep photon penetration depth. A novel implementation of a light detector is demonstrated in a 350 nm CMOS technology, whereby, through adding a majority current with associated electric field distribution in the silicon detection volume, photo-generated minority electrons get quickly guided to the center of this volume. In the center, a tiny PN junction collects the photo-electrons. The detection speed subsequently increases, NIR light is received with improved responsivity and the detector capacitance gets drastically reduced to femtofarad level. The latter improvement also increases signal-to-noise performance and can be used to trade-off with other design parameters to improve global performance of the opto-electronic system. An optical datacom receiver at 1 Gbps is demonstrated at NIR-wavelength for proving useful Current-Assisted Photodiode detector operation in an actual CMOS system.
Boulanger, S, Ingelberts, H, Van Den Dries, T, Gasser, A & Kuijk, M 2019, A novel 350 nm CMOS optical receiver based on a current-assisted photodiode detector. in GT Reed & AP Knights (eds), Silicon Photonics XIV: Silicon Photonics XIV. vol. 10923, 109231I, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10923, SPIE, San Francisco, California, USA, SPIE Photonics West 2019, San Francisco, California, United States, 2/02/19. https://doi.org/10.1117/12.2508411
Boulanger, S., Ingelberts, H., Van Den Dries, T., Gasser, A., & Kuijk, M. (2019). A novel 350 nm CMOS optical receiver based on a current-assisted photodiode detector. In G. T. Reed, & A. P. Knights (Eds.), Silicon Photonics XIV: Silicon Photonics XIV (Vol. 10923). Article 109231I (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10923). SPIE. https://doi.org/10.1117/12.2508411
@inproceedings{b82fe68284434d0c9dc4b2ece55a0638,
title = "A novel 350 nm CMOS optical receiver based on a current-assisted photodiode detector",
abstract = "Integrating an optical receiver in CMOS optimized for near infrared light (NIR) remains appealing but at the same time challenging due to the deep photon penetration depth. A novel implementation of a light detector is demonstrated in a 350 nm CMOS technology, whereby, through adding a majority current with associated electric field distribution in the silicon detection volume, photo-generated minority electrons get quickly guided to the center of this volume. In the center, a tiny PN junction collects the photo-electrons. The detection speed subsequently increases, NIR light is received with improved responsivity and the detector capacitance gets drastically reduced to femtofarad level. The latter improvement also increases signal-to-noise performance and can be used to trade-off with other design parameters to improve global performance of the opto-electronic system. An optical datacom receiver at 1 Gbps is demonstrated at NIR-wavelength for proving useful Current-Assisted Photodiode detector operation in an actual CMOS system.",
keywords = "CMOS, Current assistance, Integrated optical receiver, Optical communication, Photo-collection, Photodetector",
author = "Sven Boulanger and Hans Ingelberts and \{Van Den Dries\}, Thomas and Anas Gasser and Maarten Kuijk",
year = "2019",
month = mar,
day = "4",
doi = "10.1117/12.2508411",
language = "English",
volume = "10923",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Reed, \{Graham T.\} and Knights, \{Andrew P.\}",
booktitle = "Silicon Photonics XIV",
address = "United States",
note = "SPIE Photonics West 2019 ; Conference date: 02-02-2019 Through 07-02-2019",
url = "http://spie.org/conferences-and-exhibitions/photonics-west?SSO=1",
}