SiCN thin film is one of the most attractive silicon-based materials due to its excellent electrical, mechanical and optical properties. In this study, SiCN thin films have been prepared by the radio frequency reactive magnetron sputtering method under different sputtering power, pressure, and substrate temperature. The microstructure, morphology, and the optical and field emission properties of SiCN thin films were performed. The results indicated that the high-quality SiCN thin films have been successfully prepared and it is proved that these properties can be tailored by the preparation conditions. A main near ultraviolet light emission line at around 370 nm in SiCN thin films makes it suitable for the development of optoelectronic devices. This study can provide novel guidance for the controlled preparation of high-quality SiCN thin films by magnetron sputtering.
Cheng, C & Stiens, J 2021, 'Study on photoelectricity properties of SiCN thin films prepared by magnetron sputtering', Journal of Materials Research and Technology-JMR&T, vol. 15, pp. 460-467. https://doi.org/10.1016/j.jmrt.2021.08.043
Cheng, C., & Stiens, J. (2021). Study on photoelectricity properties of SiCN thin films prepared by magnetron sputtering. Journal of Materials Research and Technology-JMR&T, 15, 460-467. https://doi.org/10.1016/j.jmrt.2021.08.043
@article{abcc181491bc483bad279867e49ae381,
title = "Study on photoelectricity properties of SiCN thin films prepared by magnetron sputtering",
abstract = "SiCN thin film is one of the most attractive silicon-based materials due to its excellent electrical, mechanical and optical properties. In this study, SiCN thin films have been prepared by the radio frequency reactive magnetron sputtering method under different sputtering power, pressure, and substrate temperature. The microstructure, morphology, and the optical and field emission properties of SiCN thin films were performed. The results indicated that the high-quality SiCN thin films have been successfully prepared and it is proved that these properties can be tailored by the preparation conditions. A main near ultraviolet light emission line at around 370 nm in SiCN thin films makes it suitable for the development of optoelectronic devices. This study can provide novel guidance for the controlled preparation of high-quality SiCN thin films by magnetron sputtering.",
author = "Chen Cheng and Johan Stiens",
note = "Funding Information: This work was supported by the Scientific Research Plan Projects of Shaanxi Education Department ( 18JK0780 and 12JK0532 ), the National Key Research and Development Program of China ( 2019YFC1520904 ), the Key Program for International Science and Technology Cooperation Projects of Shaanxi Province ( 2018KWZ-08 ), National Natural Science Foundation of China ( 61804125 and 61701402 ) and the start-up funds from Northwestern Polytechnical University (Grant 19SH020159 and 19SH020123 ). The authors of Vrije Universiteit Brussel (VUB) through the SRP-project M3D2 and the ETRO-IOF project. Publisher Copyright: {\textcopyright} 2021 The Authors Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = nov,
day = "20",
doi = "10.1016/j.jmrt.2021.08.043",
language = "English",
volume = "15",
pages = "460--467",
journal = "Journal of Materials Research and Technology-JMR&T",
issn = "2238-7854",
publisher = "Rio de Janeiro Brazilian Metallurgical Materials and Mining Association Elsevier Editora Ltda.",
}