We present a physics-based prediction of the progressive VTH shift on fabricated Si:HfO2-FeFETs during Incremental Step Pulse Programming, with the help of our in-house, hardware-validated FeFET compact model. Our study confirms that the depolarization field across the FE layer strongly constrains the retained polarization in the gate stack after the programming waveform stops, which constitutes a fundamental, self-limiting effect on the attainable memory window in multidomain FeFETs. An extensive sensitivity study based on the model suggests that for a 9.5 nm-thick FE layer, decreasing the mean negative coercive field from -1.0 MV/cm to -1.5 MV/cm improves the MW from 0.75 V to 1.07 V, thus effectively alleviating detrimental impact of the depolarization field.
Kaczmarek, K, Bardon, MG, Xiang, Y, Breuil, L, Ronchi, N, Parvais, B, Groeseneken, G & Van Houdt, J 2021, Understanding the memory window in 1T-FeFET memories: A depolarization field perspective. in 2021 IEEE International Memory Workshop, IMW 2021 - Proceedings., 9439597, 2021 IEEE International Memory Workshop, IMW 2021 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 40-43, 2021 IEEE International Memory Workshop, IMW 2021, Dresden, Germany, 16/05/21. https://doi.org/10.1109/IMW51353.2021.9439597
Kaczmarek, K., Bardon, M. G., Xiang, Y., Breuil, L., Ronchi, N., Parvais, B., Groeseneken, G., & Van Houdt, J. (2021). Understanding the memory window in 1T-FeFET memories: A depolarization field perspective. In 2021 IEEE International Memory Workshop, IMW 2021 - Proceedings (pp. 40-43). Article 9439597 (2021 IEEE International Memory Workshop, IMW 2021 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMW51353.2021.9439597
@inproceedings{0cefb88c04fa4304bafdffca4e9fa816,
title = "Understanding the memory window in 1T-FeFET memories: A depolarization field perspective",
abstract = "We present a physics-based prediction of the progressive VTH shift on fabricated Si:HfO2-FeFETs during Incremental Step Pulse Programming, with the help of our in-house, hardware-validated FeFET compact model. Our study confirms that the depolarization field across the FE layer strongly constrains the retained polarization in the gate stack after the programming waveform stops, which constitutes a fundamental, self-limiting effect on the attainable memory window in multidomain FeFETs. An extensive sensitivity study based on the model suggests that for a 9.5 nm-thick FE layer, decreasing the mean negative coercive field from -1.0 MV/cm to -1.5 MV/cm improves the MW from 0.75 V to 1.07 V, thus effectively alleviating detrimental impact of the depolarization field. ",
keywords = "depolarization field, doped hafnia, FeFET, memory window",
author = "K. Kaczmarek and Bardon, {M. Garcia} and Y. Xiang and L. Breuil and N. Ronchi and B. Parvais and G. Groeseneken and {Van Houdt}, J.",
year = "2021",
month = may,
doi = "10.1109/IMW51353.2021.9439597",
language = "English",
series = "2021 IEEE International Memory Workshop, IMW 2021 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "40--43",
booktitle = "2021 IEEE International Memory Workshop, IMW 2021 - Proceedings",
address = "United States",
note = "2021 IEEE International Memory Workshop, IMW 2021 ; Conference date: 16-05-2021 Through 19-05-2021",
}