This paper demonstrates a broadband LNA for 60- GHz WPAN and a 92-GHz low-power Distributed Amplifier (DA) in an advanced CMOS technology.A post-processed technology (Above-IC),used for packaging and bonding pads redistribution, provides ultra-low-loss on-chip passives in a costeffective solution. In the WPAN bandwidth (57-64 GHz), the LNA has a 13.4 dB peak gain, a NF between 5.6-6.7 dB and a gain flatness of 1.7 dB. A 3-dB bandwidth of 11 GHz is achieved. The DA shows a 6.5 dB gain and a 3-dB BW of 92 GHz, giving a 195 GHz gain-bandwidth product (GBW), for a dc power consumption of 43 mW. Thank to the asset of Above-IC, this DA performs a ratio of the GBW and power consumption of 4.31 GHz/mW, which is by far the best reported tradeoff among similar architecture in CMOS,at least 2.8 times higher than others.
Pavageau, C, Dupuis, O, Dehan, M, Parvais, B, Carchon, G & Raedt, WD 2008, A 60-GHz LNA and a 92-GHz Low-power distributed amplifier in CMOS with above-IC. in 2008 European Microwave Integrated Circuit Conference, EuMIC 2008., 4772276, 2008 European Microwave Integrated Circuit Conference, EuMIC 2008, pp. 250-253, 2008 European Microwave Integrated Circuit Conference, EuMIC 2008, Amsterdam, Netherlands, 27/10/08. https://doi.org/10.1109/EMICC.2008.4772276
Pavageau, C., Dupuis, O., Dehan, M., Parvais, B., Carchon, G., & Raedt, W. D. (2008). A 60-GHz LNA and a 92-GHz Low-power distributed amplifier in CMOS with above-IC. In 2008 European Microwave Integrated Circuit Conference, EuMIC 2008 (pp. 250-253). Article 4772276 (2008 European Microwave Integrated Circuit Conference, EuMIC 2008). https://doi.org/10.1109/EMICC.2008.4772276
@inproceedings{6499b390dd764ed59ef594911061fef7,
title = "A 60-GHz LNA and a 92-GHz Low-power distributed amplifier in CMOS with above-IC",
abstract = "This paper demonstrates a broadband LNA for 60- GHz WPAN and a 92-GHz low-power Distributed Amplifier (DA) in an advanced CMOS technology.A post-processed technology (Above-IC),used for packaging and bonding pads redistribution, provides ultra-low-loss on-chip passives in a costeffective solution. In the WPAN bandwidth (57-64 GHz), the LNA has a 13.4 dB peak gain, a NF between 5.6-6.7 dB and a gain flatness of 1.7 dB. A 3-dB bandwidth of 11 GHz is achieved. The DA shows a 6.5 dB gain and a 3-dB BW of 92 GHz, giving a 195 GHz gain-bandwidth product (GBW), for a dc power consumption of 43 mW. Thank to the asset of Above-IC, this DA performs a ratio of the GBW and power consumption of 4.31 GHz/mW, which is by far the best reported tradeoff among similar architecture in CMOS,at least 2.8 times higher than others.",
author = "C. Pavageau and O. Dupuis and M. Dehan and B. Parvais and G. Carchon and Raedt, {W. De}",
year = "2008",
month = dec,
day = "1",
doi = "10.1109/EMICC.2008.4772276",
language = "English",
isbn = "9782874870071",
series = "2008 European Microwave Integrated Circuit Conference, EuMIC 2008",
pages = "250--253",
booktitle = "2008 European Microwave Integrated Circuit Conference, EuMIC 2008",
note = "2008 European Microwave Integrated Circuit Conference, EuMIC 2008 ; Conference date: 27-10-2008 Through 31-10-2008",
}