Ferndahl, M., Nemati, H., Parvais, B., Zirath, H., & Decoutere, S. (2008). Deep submicron CMOS for millimeter wave power applications. IEEE Microwave and Wireless Components Letters, 18(5), 329-331. Article 4497806. https://doi.org/10.1109/LMWC.2008.922122

@article{3f5fe99b8a1f4296a9e4bccfbe12d95e,
title = "Deep submicron CMOS for millimeter wave power applications",
abstract = "This letter gives an early assessment of deep submicron planar bulk CMOS devices for millimeter wave power amplifier (PA) applications. Using load pull measurements, a record high power density of 100 mW/mm and a transducer gain of 7 dB at 35 GHz were achieved for a 40 nm physical gate length CMOS device with a total gate width of 192 μm. Furthermore a peak PAE of 33% was reached. This shows that 40 nm gate length CMOS is feasible for medium PAs in the millimeter wave region.",
keywords = "CMOS, Microwave, Millimeter wave, Power amplifiers (PAs)",
author = "Mattias Ferndahl and Hossein Nemati and Bertrand Parvais and Herbert Zirath and Stefaan Decoutere",
year = "2008",
month = may,
day = "1",
doi = "10.1109/LMWC.2008.922122",
language = "English",
volume = "18",
pages = "329--331",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}