Nadine Collaert,
Nadine Collaert, K. Von Arnim, K. Von Arnim, R. Rooyackers, R. Rooyackers, T. Vandeweyer, T. Vandeweyer, A. Mercha, A. Mercha,
Bertrand Parvais,
Bertrand Parvais, L. Witters, L. Witters, A. Nackaerts, A. Nackaerts, E. Altamirano Sanchez, E. Altamirano Sanchez, M. Demand, M. Demand, A. Hikavyy, A. Hikavyy, S. Demuynck, S. Demuynck, K. Devriendt, K. Devriendt, F. Bauer, F. Bauer, I. Ferain, I. Ferain, A. Veloso, A. Veloso, K. De Meyer, K. De Meyer, S. Biesemans, S. Biesemans, M. Jurczak, M. Jurczak
While the potential of FinFETs for large-scale integration (LSI) was demonstrated before on relaxed device dimensions, in this paper we present performance data of aggressively scaled transistors, ring oscillators and SRAM cells. FinFET SRAMs are shown to have excellent VDD scalability (SNM-185mV at 0.6V), enabling sub-32nm low-voltage design.
Collaert, N, Von Arnim, K, Rooyackers, R, Vandeweyer, T, Mercha, A, Parvais, B, Witters, L, Nackaerts, A, Sanchez, EA, Demand, M, Hikavyy, A, Demuynck, S, Devriendt, K, Bauer, F, Ferain, I, Veloso, A, De Meyer, K, Biesemans, S & Jurczak, M 2008, Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to lOnm and 30nm gate length. in Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT., 4567246, Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, pp. 59-62, IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008, Minatec Grenoble, France, 2/06/08. https://doi.org/10.1109/ICICDT.2008.4567246
Collaert, N., Von Arnim, K., Rooyackers, R., Vandeweyer, T., Mercha, A., Parvais, B., Witters, L., Nackaerts, A., Sanchez, E. A., Demand, M., Hikavyy, A., Demuynck, S., Devriendt, K., Bauer, F., Ferain, I., Veloso, A., De Meyer, K., Biesemans, S., & Jurczak, M. (2008). Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to lOnm and 30nm gate length. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 59-62). Article 4567246 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567246
@inproceedings{adbd8d491df24087938b22c0d91a2479,
title = "Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to lOnm and 30nm gate length",
abstract = "While the potential of FinFETs for large-scale integration (LSI) was demonstrated before on relaxed device dimensions, in this paper we present performance data of aggressively scaled transistors, ring oscillators and SRAM cells. FinFET SRAMs are shown to have excellent VDD scalability (SNM-185mV at 0.6V), enabling sub-32nm low-voltage design.",
keywords = "Ring oscillators, SOI FinFET, SRAM",
author = "N. Collaert and \{Von Arnim\}, K. and R. Rooyackers and T. Vandeweyer and A. Mercha and B. Parvais and L. Witters and A. Nackaerts and Sanchez, \{E. Altamirano\} and M. Demand and A. Hikavyy and S. Demuynck and K. Devriendt and F. Bauer and I. Ferain and A. Veloso and \{De Meyer\}, K. and S. Biesemans and M. Jurczak",
year = "2008",
month = sep,
day = "22",
doi = "10.1109/ICICDT.2008.4567246",
language = "English",
isbn = "9781424418114",
series = "Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT",
pages = "59--62",
booktitle = "Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT",
note = "IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 ; Conference date: 02-06-2008 Through 04-06-2008",
}