Jegannathan, G., Ingelberts, H., Boulanger, S., & Kuijk, M. (2019). Current assisted avalanche photo diodes (CAAPDs) with separate absorption and multiplication region in conventional CMOS. Applied Physics Letters, 115(13), 1-5. Article 132101. https://doi.org/10.1063/1.5116102

@article{b058cf21534a45bf9a4cdbaa8c2d903d,
title = "Current assisted avalanche photo diodes (CAAPDs) with separate absorption and multiplication region in conventional CMOS",
abstract = "A current assisted avalanche photodetector (CAAPD) is presented with a large detection window of 40 × 40 μm2, having a small 1-fF avalanche diode in its center. To quickly guide the photogenerated electrons to the center for avalanche multiplication, a drift field with associated majority hole current is applied across the neutral detection volume. This first type of CAAPD is fabricated in a conventional 350-nm CMOS process on a high resistive p− epi-layer. The low diode-junction capacitance can be of interest to integrated receivers. The CAAPD is characterized for its basic functionality, including the effects of lateral detection delay and gain.",
author = "Gobinath Jegannathan and Hans Ingelberts and Sven Boulanger and Maarten Kuijk",
year = "2019",
month = sep,
day = "23",
doi = "10.1063/1.5116102",
language = "English",
volume = "115",
pages = "1--5",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",
}