Lederer, D., Parvais, B., Mercha, A., Collaert, N., Jurczak, M., Raskin, J. P., & Decoutere, S. (2006). Dependence of FinFET RF performance on fin width. In 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers (pp. 8-11). Article 1587887 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006). https://doi.org/10.1109/SMIC.2005.1587887

@inproceedings{debf68a1771943f3ae5f07bd01043ab8,
title = "Dependence of FinFET RF performance on fin width",
abstract = "This work analyzes the radio frequency (RF) performance of 60-nm gate length FinFETs, for which the DC behavior exhibits reduced SCE. The RF analysis is carried out as a function of the gate length as well as the fin width (W fin). Cut off frequencies (ft, fmax) on the order of 100 GHz are reported for the first time. It is shown that W fin has a large impact on those frequencies, due mainly to its effect on the access resistances. Nevertheless, it is also demonstrated that using optimized layout geometry, fmax values close to 170 GHz are to be expected.",
keywords = "Cut off frequency, FinFET, Metal gate, RF analysis, Small signal model",
author = "D. Lederer and B. Parvais and A. Mercha and N. Collaert and M. Jurczak and Raskin, {J. P.} and S. Decoutere",
year = "2006",
month = dec,
day = "1",
doi = "10.1109/SMIC.2005.1587887",
language = "English",
isbn = "0780394720",
series = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",
pages = "8--11",
booktitle = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",
note = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ; Conference date: 18-01-2006 Through 20-01-2006",
}