Parvais, B., & Siligaris, A. (2006). Modeling the SOI MOSFET nonlinearities: An empirical approach. In Transistor Level Modeling For Analog/RF IC Design (pp. 157-180). Springer Netherlands. https://doi.org/10.1007/1-4020-4556-5_6

@inbook{22aa8aa28b274982b52f868b2bbff0be,
title = "Modeling the SOI MOSFET nonlinearities: An empirical approach",
abstract = "In the radio frequency field of applications, the knowledge of both the linear and nonlinear behavior of circuits and devices is required. This chapter is intended to provide simple and efficient models suited for predicting the Silicon-on-Insulator (SOI) MOSFETs nonlinearities for high frequency applications.Aspecific attention is paid to the floating body effects and a semi-empirical approach is used for its rapid extraction capability.AVolterra based model is first introduced to explain how the MOSFET distortion varies with the frequency. In a second step, a more complete model suited for computer-aided design is presented. Experiments are used to validate the model and to show the linearity of devices presenting or not floating body effects.",
keywords = "Distortion, Empirical RF modeling, Floating body effects, HD, IMD, Linearity, Mosfet modeling, silicon-on-insulator, Volterra",
author = "B. Parvais and A. Siligaris",
year = "2006",
month = dec,
day = "1",
doi = "10.1007/1-4020-4556-5_6",
language = "English",
isbn = "1402045557",
pages = "157--180",
booktitle = "Transistor Level Modeling For Analog/RF IC Design",
publisher = "Springer Netherlands",
address = "Netherlands",
}