Parvais, B., Cerdeira, A., Schreurs, D., & Raskin, J. P. (2005). Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 18(4), 283-296. https://doi.org/10.1002/jnm.578

@article{71926a19e31c4cdbaa20b70407ccbade,
title = "Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling",
abstract = "The harmonic and intermodulation distortions of both fully-depleted (FD) and partially-depleted (PD) silicon-on-insulator (SOI) MOSFETs are studied. The analysis is based on the recently developed integral function method and the results are compared to a third-order Volterra model of the MOSFET. This modelling helps us to understand the non-linear mechanisms of the considered devices and to predict their frequency behaviour. The models are validated through large-signal network analyser measurements. The devices performances are discussed.",
keywords = "Distortion, FD, Fully-depleted, IFM, Integral function method, Intermodulation, Linearity, Partially-depleted, PD, Silicon-oninsulator, SOI, Volterra",
author = "Bertrand Parvais and Antonio Cerdeira and Dominique Schreurs and Raskin, {Jean Pierre}",
year = "2005",
month = jul,
day = "1",
doi = "10.1002/jnm.578",
language = "English",
volume = "18",
pages = "283--296",
journal = "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields",
issn = "0894-3370",
publisher = "John Wiley and Sons Ltd",
number = "4",
}