Nowadays, stiction remains one of the biggest reliability problems in the fabrication of micro- electromechanical systems (MEMS), especially when a small gap is used. To avoid the adhesion, a Self-Assembled Monolayer (SAM) could be coated. Main research in that field focuses on aliphatic chloro-silanes. We developed a novel wet-release CMOS compatible process for the fabrication of surface-micromachined beams using a perfluorated SAM. Uniform 9 {\AA} thick monolayers were observed. A static contact angle of 117° up to 300°C was measured. Furthermore, a complete 1μm thick (gap 0.5μm) polysilicon RF MEMS capacitor with aluminium interconnects realized with this process demonstrated the CMOS compatibility.
Parvais, B, Pallandre, A, Jonas, AM & Raskin, JP 2003, A fluoro-ethoxysilane-based stiction-free release process for submicron gap MEMS. in M Laudon & B Romanowicz (eds), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, vol. 1, pp. 522-525, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, United States, 23/02/03.
Parvais, B., Pallandre, A., Jonas, A. M., & Raskin, J. P. (2003). A fluoro-ethoxysilane-based stiction-free release process for submicron gap MEMS. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (pp. 522-525). (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; Vol. 1).
@inproceedings{11d403c471b9444bb4d74e6ac4c1d29c,
title = "A fluoro-ethoxysilane-based stiction-free release process for submicron gap MEMS",
abstract = "Nowadays, stiction remains one of the biggest reliability problems in the fabrication of micro- electromechanical systems (MEMS), especially when a small gap is used. To avoid the adhesion, a Self-Assembled Monolayer (SAM) could be coated. Main research in that field focuses on aliphatic chloro-silanes. We developed a novel wet-release CMOS compatible process for the fabrication of surface-micromachined beams using a perfluorated SAM. Uniform 9 {\AA} thick monolayers were observed. A static contact angle of 117° up to 300°C was measured. Furthermore, a complete 1μm thick (gap 0.5μm) polysilicon RF MEMS capacitor with aluminium interconnects realized with this process demonstrated the CMOS compatibility.",
keywords = "Hydrophobization, MEMS, Release process, SAM, Stiction",
author = "B. Parvais and A. Pallandre and Jonas, {A. M.} and Raskin, {J. P.}",
year = "2003",
month = dec,
day = "1",
language = "English",
isbn = "0972842209",
series = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",
pages = "522--525",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",
note = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003 ; Conference date: 23-02-2003 Through 27-02-2003",
}