Yu, H., Schaekers, M., Everaert, J. L., Horiguchi, N., De Meyer, K., & Collaert, N. (2022). A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond. MRS Advances, 7(36), 1369-1379. https://doi.org/10.1557/s43580-022-00404-1

@article{811200cf20f649c6b5bf5b3813218b26,
title = "A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond",
abstract = "Contact resistances take a significant portion of on-state resistances of advanced Si CMOS transistors. As a result, a metal–semiconductor contact resistivity (ρc) of sub-10–8 Ω cm2 or even sub-10–9 Ω·cm2 is required to achieve high performance for a very downscaled transistor. In this snapshot review on our ρc investigation efforts, we first introduce a test structure—a multiring circular transmission line model (MR-CTLM)—with high accuracy to measure ultralow ρc, and then we evaluate different contact solutions. Our contact solution exploration includes metal/insulator/semiconductor (MIS) contacts for n+-Si and advanced (gemano-)silicides for n+-Si and p+-SiGe. We will discuss limitations of MIS contacts. And we will demonstrate encouraging ρc of 10–9 Ω cm2 that meet the requirement of 7-nm or 5-nm CMOS technology nodes. Graphical abstract: [Figure not available: see fulltext.].",
author = "Hao Yu and Marc Schaekers and Everaert, \{Jean Luc\} and Naoto Horiguchi and \{De Meyer\}, Kristin and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to The Materials Research Society.",
year = "2022",
month = dec,
day = "1",
doi = "10.1557/s43580-022-00404-1",
language = "English",
volume = "7",
pages = "1369--1379",
journal = "MRS Advances",
issn = "2059-8521",
publisher = "Springer",
number = "36",
}