Publication Details
Overview
 
 
Nadine Collaert, Bertrand Parvais, Barend Van Liempd
 

Pate

Abstract 

In a first aspect, the present invention relates to an integrated circuit, comprising: i. a host substrate (100); ii. optionally, a first layer (200) overlaying the host substrate (100), the first layer (200) optionally comprising a first transistor (210); iii. a second layer (500) overlaying the host substrate (100) and the first layer (200), if present, the second layer (500) comprising a second transistor (510); and iv. an electromagnetic shielding structure (600) shielding the second transistor (510) from electromagnetic fields, comprising - a bottom (610, 611) underlaying the second transistor (510) and comprised in the host substrate (100), the first layer (200), if present, or the second layer (500), - one or more lateral sides (620, 621, 622) laterally bordering the second transistor (510), and - optionally, a top (630) overlaying the second transistor (510); wherein the bottom (610, 611), each of the one or more lateral sides (620, 621, 622) and, if present, the top (630) each comprise at least one shielding element independently made up of either an electrically conductive material or a trap-rich material.

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