The GaN-on-Si technology for the upcoming RF/6G/mm-Wave applications requires a robust buffer design for enhanced device performance and improved reliability. The defect states present in the various layers of the buffer stack can have a detrimental impact on both the DC and the AC performance of the device, as they can interact with the 2DEG channel carriers and/or contribute to buffer leakage mechanisms. An important reliability concern is the dynamic-RON, arising from the interaction of the 2DEG channel with the defects in the buffer stack and/or the defects in the barrier layer or barrier/cap interface. In this work, an improved and more robust current transient spectroscopy technique is used to extract the time constant spectra and the activation energies of various buffer defects. A thinner GaN channel layer is shown to increase the dynamic-RON, while a specific buffer stack configuration is shown to have a considerable impact the dynamic-RON.
Putcha, V, Cheng, L, Alian, A, Zhao, M, Lu, H, Parvais, B, Waldron, N, Linten, D & Collaert, N 2021, On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. in 2021 IEEE International Reliability Physics Symposium, IRPS ., 9405139, IEEE International Reliability Physics Symposium Proceedings, vol. 2021-March, Institute of Electrical and Electronics Engineers Inc., pp. 1-8, 2021 IEEE International Reliability Physics Symposium, IRPS 2021, Virtual, Monterey, United States, 21/03/21. https://doi.org/10.1109/IRPS46558.2021.9405139
Putcha, V., Cheng, L., Alian, A., Zhao, M., Lu, H., Parvais, B., Waldron, N., Linten, D., & Collaert, N. (2021). On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. In 2021 IEEE International Reliability Physics Symposium, IRPS (pp. 1-8). Article 9405139 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2021-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS46558.2021.9405139
@inproceedings{0a28444dbfa3493799d71603280f781a,
title = "On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices",
abstract = "The GaN-on-Si technology for the upcoming RF/6G/mm-Wave applications requires a robust buffer design for enhanced device performance and improved reliability. The defect states present in the various layers of the buffer stack can have a detrimental impact on both the DC and the AC performance of the device, as they can interact with the 2DEG channel carriers and/or contribute to buffer leakage mechanisms. An important reliability concern is the dynamic-RON, arising from the interaction of the 2DEG channel with the defects in the buffer stack and/or the defects in the barrier layer or barrier/cap interface. In this work, an improved and more robust current transient spectroscopy technique is used to extract the time constant spectra and the activation energies of various buffer defects. A thinner GaN channel layer is shown to increase the dynamic-RON, while a specific buffer stack configuration is shown to have a considerable impact the dynamic-RON. ",
keywords = "activation energy, buffer dispersion, current transient spectroscopy, dynamic-R, GaN, RF/6G applications",
author = "Vamsi Putcha and L. Cheng and AliReza Alian and Ming Zhao and Hai Lu and Bertrand Parvais and Niamh Waldron and Dimitri Linten and Nadine Collaert",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405139",
language = "English",
isbn = "9781728168944",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--8",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS",
address = "United States",
note = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
}