Publication Details
Overview
 
 
G. Rzepa, Gerhard Rzepa, Gerhard Rzepa, G. Rzepa, M. Karner, Markus Karner, M. Karner, Markus Karner, O. Baumgartner, O. Baumgartner, Oskar Baumgartner, Oskar Baumgartner, G. Strof, G. Strof, Franz Schanovsky, F. Schanovsky, Franz Schanovsky, F. Schanovsky, F. Mitterbauer, F. Mitterbauer, C. Kernstock, C. Kernstock, Hui-Wen Karner, H. W. Karner, Hui-Wen Karner, H. W. Karner, P. Weckx, Pieter Weckx, P. Weckx, Pieter Weckx, Geert Hellings, G. Hellings, Geert Hellings, G. Hellings, Dieter Claes, Dieter Claes, D. Claes, D. Claes, Z. Wu, Z. Wu, Zhigcheng Wu, Zhigcheng Wu, Yang Xiang, Y. Xiang, Yang Xiang, Y. Xiang, T. Chiarella, Thomas Chiarella, T. Chiarella, Thomas Chiarella, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, Jerome Mitard, Jerome Mitard, J. Mitard, J. Mitard, Jacopo Franco, J. Franco, Jacopo Franco, J. Franco, B. Kaczer, B. Kaczer, Ben Kaczer, Ben Kaczer, Dimitri Linten, Dimitri Linten, D. Linten, D. Linten, Z. Stanojevic, Z. Stanojevic, Zlatan Stanojevic, Zlatan Stanojevic
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE-utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator Comphy for reliability. Good agreement with experimental RO performance of iN14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made.

Reference ■
 
Rzepa, G, Karner, M, Baumgartner, O, Strof, G, Schanovsky, F, Mitterbauer, F, Kernstock, C, Karner, H-W, Weckx, P, Hellings, G, Claes, D, Wu, Z, Xiang, Y, Chiarella, T, Parvais, B, Mitard, J, Franco, J, Kaczer, B, Linten, D & Stanojevic, Z 2021, Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. in 2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings., 9405172, IEEE International Reliability Physics Symposium Proceedings, vol. 2021-March, Institute of Electrical and Electronics Engineers Inc., pp. 1-6, 2021 IEEE International Reliability Physics Symposium, IRPS 2021, Virtual, Monterey, United States, 21/03/21. https://doi.org/10.1109/IRPS46558.2021.9405172
Rzepa, G., Karner, M., Baumgartner, O., Strof, G., Schanovsky, F., Mitterbauer, F., Kernstock, C., Karner, H.-W., Weckx, P., Hellings, G., Claes, D., Wu, Z., Xiang, Y., Chiarella, T., Parvais, B., Mitard, J., Franco, J., Kaczer, B., Linten, D., & Stanojevic, Z. (2021). Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. In 2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings (pp. 1-6). Article 9405172 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2021-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS46558.2021.9405172
@inproceedings{a8551cc18260488b836f3e5a7d3e824f,
title = "Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies",
abstract = "Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE-utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator Comphy for reliability. Good agreement with experimental RO performance of iN14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made. ",
keywords = "bias temperature instabilities, high-k dielectric materials, nanosheets, semiconductor device modeling, semiconductor device reliability",
author = "Gerhard Rzepa and Markus Karner and Oskar Baumgartner and G. Strof and Franz Schanovsky and F. Mitterbauer and C. Kernstock and Hui-Wen Karner and Pieter Weckx and Geert Hellings and Dieter Claes and Zhigcheng Wu and Yang Xiang and Thomas Chiarella and Bertrand Parvais and Jerome Mitard and Jacopo Franco and Ben Kaczer and Dimitri Linten and Zlatan Stanojevic",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405172",
language = "English",
isbn = "9781728168944",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--6",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
address = "United States",
note = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
}